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DL-3149-056

Onsemi

DL-3149-056 by Onsemi

DL-3149-056 by Onsemi is a 685nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in optoelectronics and telecommunications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,075 parts In-Stock

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2,075

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Vyrian

USA . 1,323 parts In-Stock

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1,323

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 857 parts In-Stock

1+ parts

$0.072

100+ parts

-

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$0.069

857

$0.072

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$0.069

Northwest PG Solutions

USA . 527 parts In-Stock

1+ parts

$0.079

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-

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$0.070

527

$0.079

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$0.070

Kulean Microsystems

USA . 6,302 parts In-Stock

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6,302

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SupplyDigital Components

Austria . 4,806 parts In-Stock

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4,806

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Problanco Electronics

Mexico . 4,741 parts In-Stock

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4,741

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TANS Electronics

Latvia . 3,778 parts In-Stock

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3,778

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Corphita

USA . 2,098 parts In-Stock

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UHIMA Technologies

Türkiye . 900 parts In-Stock

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900

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Corohmni

South Africa . 175 parts In-Stock

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Overview

The DL-3149-056 by Onsemi is a top-of-the-line laser diode that offers unparalleled quality and reliability. Manufactured by Onsemi, a trusted name in the industry, this laser diode is perfect for a wide range of applications. With a peak wavelength of 685nm and AlGaInP semiconductor material, this laser diode ensures optimal performance in any environment. Whether you're in the medical, industrial, or telecommunications sector, the DL-3149-056 provides exceptional value with its high efficiency and durability. Upgrade your technology with this superior product today!

Feature Benefit Bullets

Peak Wavelength: 685 nm

The specific peak wavelength of 685 nm makes this laser diode suitable for applications requiring this specific wavelength, ensuring accurate results.

Optoelectronic Type: LASER DIODE

The optoelectronic type being a laser diode indicates a high level of energy efficiency and precision in light emission, making it a reliable choice for various applications.

Maximum Operating Temperature: 50 °C

With a maximum operating temperature of 50 °C, this laser diode can withstand higher temperatures compared to others, ensuring durability and reliability in various environments.

Minimum Operating Temperature: -10 °C

The ability to operate at temperatures as low as -10 °C makes this laser diode suitable for applications requiring operation in cold environments without compromising performance.

Semiconductor Material: AlGaInP

The use of AlGaInP semiconductor material offers high efficiency and reliability in light emission, making this laser diode a high-performance choice for demanding applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies installation and ensures secure attachment, making this laser diode easy to integrate into various systems and setups.

Technical Specifications

Laser Diodes DL-3149-056 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

685

Semiconductor Material:

AlGaInP

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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