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DL-3147-065

Onsemi

DL-3147-065 by Onsemi

DL-3147-065 by Onsemi is a LASER DIODE with Peak Wavelength of 650nm, Max Forward Current of 0.05A, and Max Forward Voltage of 2.6V. It operates b/w -10 °C to 70°C and is mounted using THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in various industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,116 parts In-Stock

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Vyrian

USA . 278 parts In-Stock

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278

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 613 parts In-Stock

1+ parts

$0.282

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$0.271

613

$0.282

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$0.271

Northwest PG Solutions

USA . 1,494 parts In-Stock

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$0.310

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$0.274

1,494

$0.310

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$0.274

Problanco Electronics

Mexico . 5,994 parts In-Stock

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5,994

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Kulean Microsystems

USA . 5,728 parts In-Stock

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5,728

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TANS Electronics

Latvia . 3,961 parts In-Stock

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3,961

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SupplyDigital Components

Austria . 2,462 parts In-Stock

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Corphita

USA . 2,025 parts In-Stock

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Corohmni

South Africa . 411 parts In-Stock

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UHIMA Technologies

Türkiye . 5 parts In-Stock

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Overview

Experience unparalleled quality and reliability with the DL-3147-065 Laser Diode by Onsemi. Manufactured by a trusted industry leader, this laser diode offers a peak wavelength of 650nm and a maximum forward current of 0.05A. Ideal for a wide range of applications, including medical devices, telecommunications, and industrial equipment, this laser diode provides exceptional performance in any environment. Trust Onsemi's DL-3147-065 to deliver value, efficiency, and innovation to meet your business needs.

Feature Benefit Bullets

Maximum Forward Current: 0.05 A

With a low maximum forward current requirement, this laser diode is energy efficient and less likely to overheat, ensuring a longer lifespan.

Peak Wavelength (nm): 650

The 650nm peak wavelength makes this laser diode ideal for applications that require precise focusing and visibility, such as in medical devices or laser pointers.

Optoelectronic Type: LASER DIODE

Being a laser diode ensures high efficiency and reliability, making it a preferred choice for various optical applications.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this laser diode can withstand challenging environmental conditions and maintain stable performance.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature range allows this laser diode to function effectively even in colder environments, enhancing its versatility.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mount design simplifies the installation process and provides secure mounting, ensuring stability in applications requiring precise alignment.

Maximum Forward Voltage: 2.6 V

With a manageable maximum forward voltage requirement, this laser diode is easy to power and integrate into various electronic circuits.

Technical Specifications

Laser Diodes DL-3147-065 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.05 A

Maximum Forward Voltage:

2.6 V

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

650

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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