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DL-3148-033

Onsemi

DL-3148-033 by Onsemi

DL-3148-033 by Onsemi is a LASER DIODE with peak wavelength of 635nm. It has max forward current of 0.055A and operates b/w -10 °C to 50°C. Ideal for applications requiring through hole mounting in optoelectronics.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,276 parts In-Stock

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Vyrian

USA . 625 parts In-Stock

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625

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ACDS - Activité Composants Distribution Service

France . 300 parts In-Stock

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300

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Benley Electronics

USA . 5 parts In-Stock

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$0.750

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5

$0.750

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Native Components

USA . 678 parts In-Stock

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$2.050

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678

$2.050

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Northwest PG Solutions

USA . 398 parts In-Stock

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$2.255

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398

$2.255

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Problanco Electronics

Mexico . 6,726 parts In-Stock

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TANS Electronics

Latvia . 4,411 parts In-Stock

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Corphita

USA . 2,433 parts In-Stock

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SupplyDigital Components

Austria . 2,155 parts In-Stock

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Kulean Microsystems

USA . 1,011 parts In-Stock

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Perfect Parts

USA . 672 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 300 parts In-Stock

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Glotronic Ltd.

UK . 240 parts In-Stock

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Corohmni

South Africa . 190 parts In-Stock

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UHIMA Technologies

Türkiye . 129 parts In-Stock

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Overview

Elevate your projects with the DL-3148-033 by Onsemi, a top-quality laser diode that offers unparalleled performance and reliability. Manufactured by Onsemi, a leader in optoelectronic components, this laser diode is ideal for a wide range of applications. Whether you're working on cutting-edge technology or innovative designs, this product delivers exceptional value, benefits, and advantages to meet your needs. Trust Onsemi's reputation for excellence and choose the DL-3148-033 for all your laser diode requirements.

Feature Benefit Bullets

Maximum Forward Current: 0.055 A

The low maximum forward current requirement of 0.055 A indicates efficient power usage and helps in extending the lifespan of the laser diode.

Peak Wavelength (nm): 635

The peak wavelength of 635 nm is in the visible spectrum, making this laser diode suitable for applications that require a visible laser beam.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product offers precise and focused laser emission, making it ideal for applications such as laser cutting, engraving, and medical devices.

Maximum Operating Temperature: 50 °C

With a maximum operating temperature of 50 °C, this laser diode can withstand high temperature environments, ensuring reliability and stability in operation.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature of -10 °C allows this laser diode to be used in a wide range of environmental conditions without compromising performance.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature simplifies the installation process and provides a secure and stable mounting solution for the laser diode in various applications.

Technical Specifications

Laser Diodes DL-3148-033 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.055 A

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

635

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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