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SDL7032-102

Onsemi

SDL7032-102 by Onsemi

SDL7032-102 by Onsemi is an 850nm LASER DIODE with GaAlAs semiconductor material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications in optoelectronics.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,474 parts In-Stock

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Digiode

USA . 1,967 parts In-Stock

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SupplyDigital Components

Austria . 3,047 parts In-Stock

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Kulean Microsystems

USA . 1,736 parts In-Stock

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TANS Electronics

Latvia . 860 parts In-Stock

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UHIMA Technologies

Türkiye . 840 parts In-Stock

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Problanco Electronics

Mexico . 398 parts In-Stock

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Corphita

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Corohmni

South Africa . 252 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the SDL7032-102 by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in all their products, including laser diodes. The SDL7032-102 is versatile and can be used in a wide range of applications, offering unparalleled performance and precision. Experience the value and benefits this laser diode brings to your projects, whether it's in medical equipment, industrial machinery, or scientific research. Trust Onsemi for superior products that deliver results.

Feature Benefit Bullets

Peak Wavelength: 850 nm

This specific wavelength of 850 nm is commonly used in various applications like fiber optics, telecommunications, and industrial processes, making this laser diode versatile and widely compatible.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product offers high efficiency and precise control over the output beam, making it suitable for applications requiring accuracy and reliability.

Maximum Operating Temperature: 50 °C

With a maximum operating temperature of 50 °C, this laser diode can withstand high temperatures without compromising its performance, ensuring durability and longevity.

Minimum Operating Temperature: -10 °C

The ability to operate at temperatures as low as -10 °C makes this laser diode suitable for environments with varying temperature conditions, increasing its usability in different settings.

Semiconductor Material: GaAlAs

The use of Gallium Aluminum Arsenide (GaAlAs) as the semiconductor material provides high efficiency and reliability, offering stable performance over time and making this laser diode a dependable choice for various applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature allows for easy and secure installation of the laser diode on a circuit board or other surfaces, simplifying the integration process and ensuring stability during operation.

Technical Specifications

Laser Diodes SDL7032-102 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

850

Semiconductor Material:

GaAlAs

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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