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SDL7032-001

Onsemi

SDL7032-001 by Onsemi

SDL7032-001 by Onsemi is an 830nm LASER DIODE with GaAlAs semiconductor material. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in optoelectronics and telecommunications.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 693 parts In-Stock

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Digiode

USA . 334 parts In-Stock

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Kulean Microsystems

USA . 7,570 parts In-Stock

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TANS Electronics

Latvia . 7,098 parts In-Stock

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Problanco Electronics

Mexico . 4,448 parts In-Stock

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SupplyDigital Components

Austria . 3,736 parts In-Stock

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Corohmni

South Africa . 484 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 4 parts In-Stock

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Overview

Experience high-quality performance and reliability with the SDL7032-001 laser diode by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch products like this one for various applications. Whether it's for medical devices, industrial equipment, or optical communication systems, this laser diode offers exceptional value, benefits, and advantages to customers. Trust Onsemi to deliver cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Peak Wavelength (nm): 830

The 830 nm peak wavelength is suitable for various applications such as optical communication, fiber optic sensors, and medical devices, making it a versatile choice for different industries.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product offers high efficiency, compact size, and precise control over the output beam. It is a reliable light source for numerous applications.

Maximum Operating Temperature: 50 °C

With a high maximum operating temperature of 50 °C, this laser diode can withstand rigorous and demanding environments, ensuring long-term stability and performance.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature of -10 °C allows this laser diode to operate effectively even in cold conditions, expanding its usability in various settings.

Semiconductor Material: GaAlAs

The GaAlAs semiconductor material used in this laser diode provides high efficiency, reliability, and longevity. It ensures consistent performance over an extended period.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies installation and ensures secure placement of the laser diode. It facilitates easy integration into different systems and applications.

Technical Specifications

Laser Diodes SDL7032-001 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

830

Semiconductor Material:

GaAlAs

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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