Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Peak Wavelength (nm): 1310; Maximum Response Time: .0000000005 s; Semiconductor Material: InGaAsP;
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Laser Diodes NX6308GH-AZ attributes and parameters. Explore more Laser Diodes devices from Renesas Electronics
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C0603C104K5RACAUTO
KEMET Corporation
KEMET C0603C104K5RACAUTO is a ceramic capacitor with 0.1uF capacitance, rated for 50V. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for automotive applications meeting AEC-Q200 standard, it comes in SMT package with matte tin finish and wraparound terminals.
BAV99
Daco Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
ULN-2803A
Sprague Electric
BUFFER OR INVERTER BASED PERIPHERAL DRIVER; Temperature Grade: OTHER; Terminal Form: THROUGH-HOLE; No. of Terminals: 18; Package Code: DIP; Package Shape: RECTANGULAR;
M39029/58360
Souriau
CONNECTOR ACCESSORY; Associated Military - Specifications: MIL-DTL-38999; Tool Settings: M22520/2-09; Terminal Type: CRIMP; MIL Conformity: YES; Mating Contacts: M39029/56348;
ERJ6ENF10R0V
Panasonic
Panasonic ERJ6ENF10R0V is a 10 ohm fixed resistor with 1% tolerance, suitable for surface mount applications. With a rated power dissipation of 0.125W and operating voltage of 150V, it operates b/w -55°C to 155°C. Its metal glaze/thick film technology ensures stable performance in various electronic circuits.
BAT54SLT1G
Onsemi
BAT54SLT1G by Onsemi is a fast recovery Schottky diode with 2 elements in series connected configuration. It has a max reverse recovery time of 0.005 us and a max forward voltage of 0.8 V. Ideal for applications requiring high-speed rectification, it operates b/w -55 to 150 °C and can handle a max output current of 0.2 A.
2N2222A
Diotec Semiconductor Ag
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Maximum Time At Peak Reflow Temperature (s): 10;
FDN306P
FDN306P by Onsemi is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 2.6A and 0.04 ohm RDS(on), suitable for small outline packages at temperatures ranging from -55 to 150°C.
SS14
Sensitron Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM2675M-ADJ/NOPB
National Semiconductor
SWITCHING REGULATOR; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
LM2931AZ-5.0G
LM2931AZ-5.0G by Onsemi is a fixed positive single output LDO regulator with a nominal output voltage of 5V and max output current of 0.1A. It has a max dropout voltage of 0.6V, making it suitable for applications requiring stable power supply in temperature-sensitive environments up to 125°C. The package style is cylindrical with wire terminals, ideal for rail packing methods in various electronic devices.
1N4148WS
Taitron Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
General Semiconductor
Kingwell Technonlogy
Souriau-sunbank Connection Technologies
Souriau-sunbank's M39029/58360 is a MIL-Spec backshell with CRIMP contact type and male gender. It conforms to MIL-DTL-38999 standards, mates with M39029/56348 contacts, and requires M81969/14-01 insertion tools. Ideal for military applications requiring reliable crimp terminals.
2N7002
Supertex
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Maximum Feedback Capacitance (Crss): 5 pF;
LM358AN
Texas Instruments
LM358AN by Texas Instruments is an Operational Amplifier with 2 functions. It has a Max Input Offset Voltage of 5000 uV and Nominal Common Mode Reject Ratio of 85 dB. Widely used in voltage-feedback applications due to its high Min Voltage Gain of 15000 and Unity Gain Bandwidth of 1000 kHz.
Changzhou Starsea Electronics
M39029/56-351
TE Connectivity
TE Connectivity's M39029/56-351 is a CRIMP contact type backshell accessory with rated voltage of 115V. It operates b/w -65 to 175 °C, suitable for MIL-C-39029/56 connectors with wire gauge ranging from 28 to 22 AWG. Ideal for military applications requiring female contacts and copper alloy material.
NX8563LB469-BA
Renesas Electronics
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAs; Maximum Operating Temperature: 65 Cel; Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1546;
STH61008G
Infineon Technologies
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Forward Voltage: 1.5 V; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e0;
NX6351GP27-AZ
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Semiconductor Material: AlGaInAs; Peak Wavelength (nm): 1270; Maximum Forward Voltage: 2 V;
TOLD151R
Toshiba
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 50 Cel; Maximum Forward Current: .095 A; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 810;
HL6344G
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .045 A; Maximum Threshold Current: 30 mA; Configuration: SINGLE WITH BUILT-IN PHOTO DIODE; Maximum Forward Voltage: 2.7 V;
SPLPL90-3
Laser Components
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Forward Voltage: 24 V; JESD-609 Code: e0; Minimum Operating Temperature: -40 Cel;
NX8564LE565-BC
LASER DIODE; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -20 Cel; Maximum Response Time: .000000000125 s; Maximum Forward Voltage: 2 V; Maximum Forward Current: .15 A;
NX8571SA405-BA
LASER DIODE; Semiconductor Material: InGaAsP; Maximum Forward Current: .01 A; Peak Wavelength (nm): 1541; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel;
SDL8033-001
SDL8033-001 by Onsemi is an 875nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications.
NX8563LA397-CD-A
LASER DIODE; Maximum Forward Voltage: 2 V; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1540; Maximum Forward Current: .3 A; Maximum Response Time: .00000000012 s;
STH91008A
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: 0 Cel; Peak Wavelength (nm): 1550; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .12 A;
NX8570SC976-BA-A
LASER DIODE; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1597; Maximum Forward Current: .3 A;
NX8560SJ389-CC
LASER DIODE; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2 V; Semiconductor Material: GaAs; Maximum Response Time: .00000000004 s;
TOLD321BCC
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000000001 s; Minimum Operating Temperature: -30 Cel; Peak Wavelength (nm): 1310; Maximum Operating Temperature: 80 Cel;
TOLD171
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 830; Maximum Forward Current: .095 A;
NX8567SAM354-CC
LASER DIODE; Maximum Forward Current: .15 A; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel; Maximum Response Time: .000000000125 s; Maximum Forward Voltage: 2 V;
NX8563LB549
LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Forward Voltage: 1.5 V; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 65 Cel; Semiconductor Material: InGaAs;
TOED313
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000000035 s; Maximum Operating Temperature: 60 Cel; Peak Wavelength (nm): 1310; Maximum Forward Voltage: 1.5 V;
TOLD322CCC
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 80 Cel; Peak Wavelength (nm): 1310; Maximum Forward Current: .15 A; Minimum Operating Temperature: -30 Cel;
SFH487401
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Spectral Bandwidth: 2 m; Shape: ROUND; Nominal Output Power: 1000 W;
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NX6342EP-AZ
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Nominal Output Power: 15 W; Maximum Response Time: .00000000005 s; Minimum Operating Temperature: -5 Cel; Configuration: SINGLE WITH BUILT-IN PHOTO DIODE;
NX6307SI
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAsP; Maximum Response Time: .0000000002 s; Peak Wavelength (nm): 1.31; Maximum Forward Voltage: 1.6 V;
NX6306GJ
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000000005 s; Peak Wavelength (nm): 1310; Maximum Forward Voltage: 1.6 V; Semiconductor Material: InGaAsP;
NX6314EH-AZ
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Minimum Operating Temperature: -40 Cel; Maximum Response Time: .00000000015 s; Semiconductor Material: InGaAsP;
NX6307GI
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 1.6 V; Peak Wavelength (nm): 1.31; Maximum Response Time: .0000000002 s;
NX6350EP27-AZ
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -5 Cel; Maximum Forward Current: .12 A; Maximum Operating Temperature: 85 Cel; Semiconductor Material: InGaAs;
NX63067SK
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 85 Cel; Maximum Forward Voltage: 1.6 V;
NX6307SJ
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 1.6 V; Maximum Operating Temperature: 85 Cel; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1.31;
NX6306GK
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 85 Cel; Maximum Response Time: .0000000005 s; Maximum Forward Current: .15 A;
NX6314EH
LASER DIODE;
NX6309GH-AZ
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -40 Cel; Maximum Response Time: .0000000005 s;
NX6306SJ
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Maximum Forward Voltage: 1.6 V; Maximum Forward Current: .15 A; Minimum Operating Temperature: -40 Cel;
NX6342EP
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Size: 2 mm; Maximum Response Time: .00000000005 s; Maximum Forward Current: .12 A; Shape: ROUND;
NX6306GI
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Peak Wavelength (nm): 1310; Semiconductor Material: InGaAsP; Maximum Response Time: .0000000005 s;
NX6307GJ
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1.31; Maximum Operating Temperature: 85 Cel; Maximum Response Time: .0000000002 s; Semiconductor Material: InGaAsP;
NX63067SH
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Minimum Operating Temperature: -20 Cel; Maximum Forward Voltage: 1.6 V; Maximum Forward Current: .15 A;
NX6306GH
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Maximum Forward Current: .15 A; Maximum Response Time: .0000000005 s; Peak Wavelength (nm): 1310;
NX6306SI
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Maximum Forward Current: .15 A; Maximum Operating Temperature: 85 Cel; Semiconductor Material: InGaAsP;
NX6311EH-AZ
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Maximum Response Time: .00000000009 s; Semiconductor Material: AlGaInAs; Maximum Forward Voltage: 1.6 V;
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