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SDL4032-201

Onsemi

SDL4032-201 by Onsemi

SDL4032-201 by Onsemi is an 830nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise optical emission in a wide temperature range.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,051 parts In-Stock

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Digiode

USA . 859 parts In-Stock

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859

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TANS Electronics

Latvia . 5,141 parts In-Stock

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Kulean Microsystems

USA . 4,130 parts In-Stock

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SupplyDigital Components

Austria . 1,781 parts In-Stock

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Problanco Electronics

Mexico . 1,087 parts In-Stock

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Corphita

USA . 395 parts In-Stock

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UHIMA Technologies

Türkiye . 297 parts In-Stock

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Corohmni

South Africa . 126 parts In-Stock

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Overview

Experience the exceptional quality and reliability of Onsemi's SDL4032-201 Laser Diode. Designed for a wide range of applications, this product offers unmatched performance and precision. Whether you're in the medical, industrial, or telecommunications industry, this laser diode provides superior value and benefits. Say goodbye to downtime and hello to seamless operations with the SDL4032-201 by Onsemi. Elevate your business with cutting-edge technology from a trusted manufacturer.

Feature Benefit Bullets

Peak Wavelength (nm): 830

The peak wavelength of 830 nm makes this laser diode suitable for applications requiring precision and accuracy, such as in medical devices or communication systems.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product offers high efficiency and reliability in converting electrical energy into coherent light, making it ideal for various industrial and scientific applications.

Maximum Operating Temperature: 50 °C

With a maximum operating temperature of 50 °C, this laser diode can withstand high temperatures, ensuring consistent performance in demanding environments.

Minimum Operating Temperature: -10 °C

The ability to operate at temperatures as low as -10 °C makes this laser diode suitable for a wide range of applications, including outdoor or cold environments.

Semiconductor Material: GaAlAs

The use of GaAlAs semiconductor material in this laser diode provides high optical output power and efficiency, making it an excellent choice for high-power applications.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mount design of this laser diode facilitates easy installation and reliable connection, ensuring stable performance in various equipment and devices.

Technical Specifications

Laser Diodes SDL4032-201 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

830

Semiconductor Material:

GaAlAs

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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