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DL-4038-226

Onsemi

DL-4038-226 by Onsemi

DL-4038-226 by Onsemi is a Laser Diode with 0.085A max forward current, peak wavelength of 635nm, and 2.6V max forward voltage. Ideal for applications requiring laser diodes in temperatures ranging from -10 °C to 40°C with through hole mounting feature.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,143 parts In-Stock

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Vyrian

USA . 1,456 parts In-Stock

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SupplyDigital Components

Austria . 8,386 parts In-Stock

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TANS Electronics

Latvia . 6,980 parts In-Stock

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Problanco Electronics

Mexico . 5,132 parts In-Stock

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Kulean Microsystems

USA . 5,011 parts In-Stock

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Corphita

USA . 2,232 parts In-Stock

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Northwest PG Solutions

USA . 1,261 parts In-Stock

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Native Components

USA . 653 parts In-Stock

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UHIMA Technologies

Türkiye . 445 parts In-Stock

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Corohmni

South Africa . 285 parts In-Stock

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Overview

Elevate your technological projects with the DL-4038-226 by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in their laser diodes. Whether you're working on communication systems, medical devices, or industrial applications, this laser diode offers exceptional performance and precision. With a peak wavelength of 635nm and a maximum forward current of 0.085A, the DL-4038-226 provides unmatched value and versatility for your projects. Trust Onsemi to deliver cutting-edge solutions for your optoelectronic needs.

Feature Benefit Bullets

Maximum Forward Current: 0.085 A

This laser diode has a low maximum forward current, making it energy-efficient and reducing the risk of overheating during operation.

Peak Wavelength (nm): 635

With a peak wavelength of 635 nm, this laser diode is suitable for a variety of applications including medical, industrial, and research purposes.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product provides a reliable and stable source of coherent light, making it ideal for precision tasks such as laser cutting and engraving.

Maximum Operating Temperature: 40 °C

The high maximum operating temperature of 40 °C allows this laser diode to perform effectively in various environments without risk of damage.

Minimum Operating Temperature: -10 °C

With a low minimum operating temperature of -10 °C, this laser diode is suitable for use in cold environments or during cold seasons.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mount design of this laser diode simplifies the installation process and ensures secure placement in electronic circuits or devices.

Maximum Forward Voltage: 2.6 V

The low maximum forward voltage requirement of 2.6 V helps to minimize power consumption and heat generation, resulting in improved efficiency and longevity of the laser diode.

Technical Specifications

Laser Diodes DL-4038-226 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.085 A

Maximum Forward Voltage:

2.6 V

Mounting Feature:

Maximum Operating Temperature:

40 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

635

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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