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DL4034-151

Onsemi

DL4034-151 by Onsemi

DL4034-151 by Onsemi is a LASER DIODE with Peak Wavelength of 780nm, Max Forward Current of 0.08A, and Operating Temperature range from -10 °C to 50°C. It is ideal for applications requiring precise optical emission in through-hole mounting setups.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,587 parts In-Stock

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Digiode

USA . 1,448 parts In-Stock

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Native Components

USA . 738 parts In-Stock

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$171.945

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$165.068

738

$171.945

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$165.068

Northwest PG Solutions

USA . 916 parts In-Stock

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$189.140

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916

$189.140

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Problanco Electronics

Mexico . 6,735 parts In-Stock

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Kulean Microsystems

USA . 4,818 parts In-Stock

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TANS Electronics

Latvia . 3,223 parts In-Stock

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SupplyDigital Components

Austria . 2,109 parts In-Stock

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Corphita

USA . 1,288 parts In-Stock

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UHIMA Technologies

Türkiye . 506 parts In-Stock

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Corohmni

South Africa . 260 parts In-Stock

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Overview

Experience top-notch quality and unmatched performance with the DL4034-151 Laser Diode by Onsemi. As a leading manufacturer in the industry, Onsemi delivers cutting-edge technology and reliability in all their products. The DL4034-151 is perfect for a wide range of applications, offering exceptional value, precision, and efficiency. Whether you're in need of laser diodes for medical equipment, telecommunications, or industrial machinery, this product provides the optimal solution for your needs. Trust Onsemi to deliver superior quality and innovation in every aspect of their laser diodes.

Feature Benefit Bullets

Maximum Forward Current: 0.08 A

With a higher maximum forward current, this laser diode can handle more power, making it suitable for high-intensity applications.

Peak Wavelength (nm): 780

The specific peak wavelength of 780 nm is ideal for various applications such as telecommunications, medical devices, and optical sensors.

Optoelectronic Type: LASER DIODE

Being a laser diode means this product emits a highly coherent and focused beam of light, making it suitable for precision applications like laser cutting and engraving.

Maximum Operating Temperature: 50 °C

With a maximum operating temperature of 50 °C, this laser diode can withstand higher temperatures without affecting its performance, making it reliable for use in various industries.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature of -10 °C ensures that this laser diode can function in colder environments, expanding its usability in a wide range of applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature allows for easy and secure installation of the laser diode on circuit boards, ensuring stability and longevity of the product.

Technical Specifications

Laser Diodes DL4034-151 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.08 A

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

780

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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