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DL-4038-026

Onsemi

DL-4038-026 by Onsemi

DL-4038-026 by Onsemi is a Laser Diode with 0.085A max forward current, 635nm peak wavelength, and 2.6V max forward voltage. Ideal for applications requiring LASER DIODE optoelectronics in temperatures ranging from -10 °C to 40°C with through-hole mounting feature.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,406 parts In-Stock

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1,406

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Vyrian

USA . 1,020 parts In-Stock

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1,020

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 863 parts In-Stock

1+ parts

$0.121

100+ parts

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$0.116

863

$0.121

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$0.116

Northwest PG Solutions

USA . 2,172 parts In-Stock

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$0.133

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$0.118

2,172

$0.133

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$0.118

TANS Electronics

Latvia . 7,425 parts In-Stock

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7,425

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SupplyDigital Components

Austria . 4,491 parts In-Stock

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4,491

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Problanco Electronics

Mexico . 3,581 parts In-Stock

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Corphita

USA . 1,357 parts In-Stock

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Kulean Microsystems

USA . 1,015 parts In-Stock

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Corohmni

South Africa . 310 parts In-Stock

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UHIMA Technologies

Türkiye . 2 parts In-Stock

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Overview

Experience the ultimate in precision and reliability with the DL-4038-026 by Onsemi. As a leading manufacturer of laser diodes, Onsemi sets the industry standard for quality and performance. The DL-4038-026 is ideal for a wide range of applications, offering unparalleled value and benefits to customers. Whether you're in need of high-performance laser diodes for medical equipment, industrial applications, or telecommunications, the DL-4038-026 delivers exceptional results every time. Trust Onsemi to provide you with the cutting-edge technology you need to succeed.

Feature Benefit Bullets

Maximum Forward Current: 0.085 A

Low forward current helps in ensuring the longevity and stability of the laser diode.

Peak Wavelength (nm): 635

The specific wavelength of 635nm makes this laser diode suitable for various applications including industrial, medical, and research.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product provides highly focused and coherent laser beams for precise applications.

Maximum Operating Temperature: 40 °C

With a high maximum operating temperature, this laser diode can withstand demanding working conditions.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature range ensures that this laser diode can be used in a wide range of environments.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature allows for secure and stable installation of the laser diode on a circuit board.

Maximum Forward Voltage: 2.6 V

The low forward voltage requirement of 2.6V helps in efficient power management and lower energy consumption.

Technical Specifications

Laser Diodes DL-4038-026 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.085 A

Maximum Forward Voltage:

2.6 V

Mounting Feature:

Maximum Operating Temperature:

40 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

635

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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