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DL7032-001

Onsemi

DL7032-001 by Onsemi

DL7032-001 by Onsemi is a Laser Diode with 0.15A max forward current, 830nm peak wavelength, and -10 to 50 °C operating temp range. Ideal for applications requiring THROUGH HOLE MOUNT optoelectronics in various industries.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 1,912 parts In-Stock

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Vyrian

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Kulean Microsystems

USA . 7,403 parts In-Stock

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Problanco Electronics

Mexico . 6,394 parts In-Stock

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SupplyDigital Components

Austria . 3,262 parts In-Stock

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TANS Electronics

Latvia . 2,375 parts In-Stock

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Northwest PG Solutions

USA . 1,086 parts In-Stock

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UHIMA Technologies

Türkiye . 765 parts In-Stock

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Native Components

USA . 586 parts In-Stock

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Corohmni

South Africa . 484 parts In-Stock

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Corphita

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Overview

Elevate your projects with the DL7032-001 by Onsemi, a top-quality laser diode that guarantees precision and reliability. Manufactured by Onsemi, a trusted name in the industry, this laser diode is perfect for various applications requiring high-performance optoelectronics. With a peak wavelength of 830nm and a maximum forward current of 0.15A, this diode operates flawlessly even in extreme temperatures. Whether you're working on industrial automation, medical equipment, or telecommunications, the DL7032-001 offers unmatched value, efficiency, and versatility. Upgrade your designs today with this exceptional product from Onsemi.

Feature Benefit Bullets

Maximum Forward Current: 0.15 A

Having a maximum forward current of 0.15 A ensures efficient operation and helps in preventing overheating, making this laser diode a reliable choice.

Peak Wavelength (nm): 830

With a peak wavelength of 830 nm, this laser diode is suitable for applications that require precision and accuracy, such as medical devices or industrial alignment systems.

Optoelectronic Type: LASER DIODE

Being a laser diode ensures that this product emits a coherent and focused beam of light, making it ideal for applications like laser pointers, barcode scanners, or optical communication.

Maximum Operating Temperature: 50 °C

The maximum operating temperature of 50 °C allows this laser diode to perform reliably in various environmental conditions without the risk of malfunction due to overheating.

Minimum Operating Temperature: -10 °C

With a minimum operating temperature of -10 °C, this laser diode can also function effectively in colder environments, increasing its versatility and usability.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature simplifies the installation process and provides a secure and stable connection, ensuring the laser diode stays in place during operation, making it a user-friendly choice for integration into different systems.

Technical Specifications

Laser Diodes DL7032-001 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.15 A

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

830

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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