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DL-3038-033

Onsemi

DL-3038-033 by Onsemi

DL-3038-033 by Onsemi is a 640nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in various industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,806 parts In-Stock

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Digiode

USA . 1,171 parts In-Stock

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Kulean Microsystems

USA . 6,015 parts In-Stock

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SupplyDigital Components

Austria . 4,248 parts In-Stock

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TANS Electronics

Latvia . 3,247 parts In-Stock

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Northwest PG Solutions

USA . 2,200 parts In-Stock

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Problanco Electronics

Mexico . 1,631 parts In-Stock

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Corphita

USA . 1,113 parts In-Stock

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UHIMA Technologies

Türkiye . 803 parts In-Stock

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Corohmni

South Africa . 326 parts In-Stock

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Native Components

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Overview

Experience the superior quality and reliability of Onsemi with the DL-3038-033 Laser Diode. This cutting-edge product is perfect for a wide range of applications, providing exceptional performance and precision. Whether you're in the medical field, industrial sector, or research and development, this laser diode offers unmatched value and benefits. Trust Onsemi to deliver top-of-the-line technology that meets all your needs. Elevate your projects with the DL-3038-033 today.

Feature Benefit Bullets

Peak Wavelength (nm): 640

The peak wavelength of 640nm indicates that this laser diode produces light in the red spectrum, which is commonly used for various applications such as laser pointers, barcode scanners, and medical equipment.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product offers high efficiency and precise control over the output beam, making it suitable for applications that require focused and coherent light output.

Maximum Operating Temperature: 50 °C

The high maximum operating temperature of 50 °C ensures that this laser diode can withstand elevated temperatures, making it suitable for use in environments where heat may be a concern.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature of -10 °C allows this laser diode to operate in colder environments without risking damage or performance issues, increasing its versatility.

Semiconductor Material: AlGaInP

The AlGaInP semiconductor material used in this laser diode offers high optical output power and efficiency, making it an excellent choice for applications that require high performance and reliability.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature of this laser diode simplifies the installation process and provides a secure and stable connection, ensuring consistent performance over time.

Technical Specifications

Laser Diodes DL-3038-033 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

640

Semiconductor Material:

AlGaInP

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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