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DL-3039-011

Onsemi

DL-3039-011 by Onsemi

DL-3039-011 by Onsemi is a 680nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 60°C, suitable for THROUGH HOLE MOUNT applications in optoelectronics.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 1,105 parts In-Stock

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Digiode

USA . 568 parts In-Stock

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Kulean Microsystems

USA . 8,120 parts In-Stock

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SupplyDigital Components

Austria . 5,592 parts In-Stock

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Problanco Electronics

Mexico . 4,535 parts In-Stock

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TANS Electronics

Latvia . 2,090 parts In-Stock

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Corphita

USA . 1,368 parts In-Stock

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Native Components

USA . 653 parts In-Stock

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UHIMA Technologies

Türkiye . 595 parts In-Stock

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Corohmni

South Africa . 255 parts In-Stock

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Northwest PG Solutions

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Overview

Discover the superior quality and reliability of the DL-3039-011 Laser Diode by Onsemi. With a peak wavelength of 680nm, this state-of-the-art optoelectronic component is perfect for a wide range of applications. From laser pointers to medical equipment, this laser diode offers unmatched precision and performance. Trust in Onsemi's reputation for excellence and experience the value and benefits that the DL-3039-011 brings to your projects. Upgrade to the best with Onsemi.

Feature Benefit Bullets

Peak Wavelength: 680nm

The peak wavelength of 680nm ensures precise and accurate laser output, making it suitable for a wide range of applications including medical devices and optical communication systems.

Optoelectronic Type: LASER DIODE

The use of laser diode technology provides high efficiency and reliability, making this product a cost-effective solution for various industrial and scientific applications.

Maximum Operating Temperature: 60 °C

With a maximum operating temperature of 60 °C, this laser diode can perform reliably even in challenging environments where temperature fluctuations may occur.

Minimum Operating Temperature: -10 °C

The ability to operate at temperatures as low as -10 °C makes this laser diode suitable for applications that require cold temperature operation, such as in aerospace or automotive industries.

Semiconductor Material: AlGaInP

The use of AlGaInP semiconductor material ensures high optical power output and long operational lifetime, making this laser diode a durable and efficient choice for demanding applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature makes it easy to integrate this laser diode into existing systems, offering flexibility in design and installation for various industrial and research applications.

Technical Specifications

Laser Diodes DL-3039-011 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

680

Semiconductor Material:

AlGaInP

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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