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DL-3038-023

Onsemi

DL-3038-023 by Onsemi

DL-3038-023 by Onsemi is a 640nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 40°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in optoelectronics and telecommunications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,682 parts In-Stock

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Vyrian

USA . 1,230 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 258 parts In-Stock

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$0.156

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$0.150

258

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$0.150

Northwest PG Solutions

USA . 1,436 parts In-Stock

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$0.172

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$0.151

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$0.172

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$0.151

Problanco Electronics

Mexico . 6,440 parts In-Stock

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6,440

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Kulean Microsystems

USA . 6,239 parts In-Stock

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6,239

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TANS Electronics

Latvia . 2,219 parts In-Stock

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2,219

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SupplyDigital Components

Austria . 723 parts In-Stock

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723

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Corphita

USA . 296 parts In-Stock

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UHIMA Technologies

Türkiye . 262 parts In-Stock

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Corohmni

South Africa . 210 parts In-Stock

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Overview

Unlock a world of possibilities with the DL-3038-023 laser diode by Onsemi. Known for their superior quality and reliability, Onsemi products are trusted by professionals worldwide. This laser diode, with a peak wavelength of 640nm, offers endless applications in fields such as telecommunications, medical equipment, and industrial machinery. Experience the value and benefits of this innovative technology, from precise targeting to efficient signal transmission. Trust Onsemi to deliver cutting-edge solutions that exceed your expectations.

Feature Benefit Bullets

Peak Wavelength: 640 nm

The specific peak wavelength of 640 nm makes this laser diode suitable for applications requiring precise measurements or communications in the red light spectrum.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product offers high optical power output and efficiency, making it ideal for applications that require focused and intense light output.

Maximum Operating Temperature: 40 °C

The high maximum operating temperature of 40 °C ensures the reliability and stability of the laser diode even in environments with elevated temperatures.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature of -10 °C allows this laser diode to function effectively in a wide range of temperature conditions, providing versatility for various applications.

Semiconductor Material: AlGaInP

The AlGaInP semiconductor material used in this laser diode offers efficient light emission in the visible spectrum, making it suitable for applications such as laser pointers, barcode scanners, and optical communications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation and integration of this laser diode into electronic circuits or systems, making it easier to use in different devices or equipment.

Technical Specifications

Laser Diodes DL-3038-023 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Mounting Feature:

Maximum Operating Temperature:

40 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

640

Semiconductor Material:

AlGaInP

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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