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DL3038-021

Onsemi

DL3038-021 by Onsemi

DL3038-021 by Onsemi is a 640nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 40°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in optoelectronics and telecommunications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,170 parts In-Stock

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Vyrian

USA . 498 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 273 parts In-Stock

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$7.303

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273

$7.303

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Kulean Microsystems

USA . 6,320 parts In-Stock

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SupplyDigital Components

Austria . 5,194 parts In-Stock

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TANS Electronics

Latvia . 4,917 parts In-Stock

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Northwest PG Solutions

USA . 1,725 parts In-Stock

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$7.157

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Corphita

USA . 325 parts In-Stock

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UHIMA Technologies

Türkiye . 139 parts In-Stock

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Problanco Electronics

Mexico . 121 parts In-Stock

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Corohmni

South Africa . 59 parts In-Stock

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Overview

Unleash the power of precision with the DL3038-021 by Onsemi, a leader in laser diode technology. This cutting-edge product offers unparalleled quality and performance, making it ideal for a wide range of applications. Whether you need precise laser guidance in medical equipment, industrial machinery, or scientific instruments, this laser diode delivers exceptional value, reliability, and efficiency. Trust Onsemi to provide the innovative solutions you need to stay ahead in today's fast-paced world.

Feature Benefit Bullets

Peak Wavelength: 640 nm

This specific wavelength is suitable for various applications such as medical equipment, laser therapy, and laser printing.

Optoelectronic Type: LASER DIODE

Being a laser diode ensures high efficiency, precise beam quality, and long lifespan which are important factors for many laser applications.

Maximum Operating Temperature: 40 °C

With a high maximum operating temperature, this laser diode can withstand demanding environmental conditions and ensure reliable performance even in high heat scenarios.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature allows the laser diode to function in cold environments, expanding its usability in a wide range of applications.

Semiconductor Material: AlGaInP

AlGaInP is known for its high efficiency and stability, making it a reliable choice for laser diode applications where consistent performance is crucial.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature provides secure and stable placement of the laser diode, ensuring proper alignment and easy integration into various electronic systems.

Technical Specifications

Laser Diodes DL3038-021 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Mounting Feature:

Maximum Operating Temperature:

40 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

640

Semiconductor Material:

AlGaInP

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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