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DL3039-051

Onsemi

DL3039-051 by Onsemi

DL3039-051 by Onsemi is a 680nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 60°C, suitable for THROUGH HOLE MOUNT applications in optoelectronics.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 1,271 parts In-Stock

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Vyrian

USA . 112 parts In-Stock

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Native Components

USA . 100 parts In-Stock

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$0.247

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$0.237

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Northwest PG Solutions

USA . 362 parts In-Stock

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$0.272

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Problanco Electronics

Mexico . 6,724 parts In-Stock

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TANS Electronics

Latvia . 4,579 parts In-Stock

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Kulean Microsystems

USA . 4,266 parts In-Stock

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SupplyDigital Components

Austria . 3,531 parts In-Stock

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Corphita

USA . 1,044 parts In-Stock

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Corohmni

South Africa . 499 parts In-Stock

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UHIMA Technologies

Türkiye . 389 parts In-Stock

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Overview

Elevate your applications with the DL3039-051 by Onsemi, a top-tier manufacturer known for cutting-edge laser diodes. Perfect for a variety of industries, this laser diode offers unparalleled quality and reliability. With a peak wavelength of 680nm and a wide operating temperature range, customers can trust in its performance. Whether you're looking to improve precision or enhance efficiency, the DL3039-051 delivers value, benefits, and advantages that will elevate your projects to new heights. Choose Onsemi for superior quality and unmatched results.

Feature Benefit Bullets

Peak Wavelength: 680 nm

The specific peak wavelength of 680 nm makes this laser diode suitable for applications such as medical devices and laser pointers.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product provides high efficiency and precise control, making it ideal for various industrial and consumer electronics applications.

Maximum Operating Temperature: 60 °C

With a maximum operating temperature of 60 °C, this laser diode can withstand high temperatures, ensuring reliable performance in challenging environments.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature of -10 °C allows this laser diode to operate effectively in cold conditions without risking damage or performance issues.

Semiconductor Material: AlGaInP

The AlGaInP semiconductor material used in this laser diode offers high efficiency and durability, providing long-lasting performance and stable output.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature allows for easy and secure installation of the laser diode onto circuit boards or other mounting surfaces, ensuring stability and proper heat dissipation.

Technical Specifications

Laser Diodes DL3039-051 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

680

Semiconductor Material:

AlGaInP

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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