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DL3038-051

Onsemi

DL3038-051 by Onsemi

DL3038-051 by Onsemi is a 640nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 40°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in optoelectronics and telecommunications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,780 parts In-Stock

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Vyrian

USA . 558 parts In-Stock

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SupplyDigital Components

Austria . 5,612 parts In-Stock

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Kulean Microsystems

USA . 5,001 parts In-Stock

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Problanco Electronics

Mexico . 1,874 parts In-Stock

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Northwest PG Solutions

USA . 1,859 parts In-Stock

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Corphita

USA . 1,016 parts In-Stock

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TANS Electronics

Latvia . 307 parts In-Stock

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UHIMA Technologies

Türkiye . 248 parts In-Stock

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Native Components

USA . 152 parts In-Stock

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Corohmni

South Africa . 67 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the DL3038-051 Laser Diode by Onsemi! Crafted with precision and expertise, this innovative product offers unmatched quality and reliability. Ideal for a wide range of applications, from medical devices to industrial equipment, this laser diode provides superior performance and efficiency. Elevate your projects with the DL3038-051 and experience the value, benefits, and advantages that only Onsemi can deliver. Trust in Onsemi for all your optoelectronic needs.

Feature Benefit Bullets

Peak Wavelength (nm): 640

The 640nm peak wavelength makes this laser diode suitable for applications where a specific wavelength is required, such as in medical devices or optical communication systems.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product offers high power and efficiency compared to other types of light sources, making it ideal for various industrial and scientific applications.

Maximum Operating Temperature: 40 °C

With a maximum operating temperature of 40 °C, this laser diode can withstand high temperatures, ensuring reliable performance in demanding environments.

Minimum Operating Temperature: -10 °C

The -10 °C minimum operating temperature allows this laser diode to be used in cold conditions without affecting its performance, making it versatile for different applications.

Semiconductor Material: AlGaInP

The AlGaInP semiconductor material used in this laser diode provides excellent efficiency and reliability, resulting in stable and consistent output for precision applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process of this laser diode, making it easier for users to integrate into their systems or devices effectively.

Technical Specifications

Laser Diodes DL3038-051 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Mounting Feature:

Maximum Operating Temperature:

40 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

640

Semiconductor Material:

AlGaInP

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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