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DL-7140-201S

Onsemi

DL-7140-201S by Onsemi

DL-7140-201S by Onsemi is a Laser Diode with peak wavelength of 785nm, max forward current of 0.14A, and max operating temp of 60 °C. Ideal for applications requiring precise laser emission in medical or industrial settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 5,847 parts In-Stock

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Digiode

USA . 2,327 parts In-Stock

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Kulean Microsystems

USA . 6,996 parts In-Stock

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Problanco Electronics

Mexico . 3,987 parts In-Stock

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TANS Electronics

Latvia . 2,413 parts In-Stock

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Northwest PG Solutions

USA . 2,305 parts In-Stock

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Corphita

USA . 1,690 parts In-Stock

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UHIMA Technologies

Türkiye . 795 parts In-Stock

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SupplyDigital Components

Austria . 660 parts In-Stock

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Corohmni

South Africa . 233 parts In-Stock

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Native Components

USA . 39 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the DL-7140-201S by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability in their laser diodes. The DL-7140-201S is not only versatile but also efficient, making it ideal for a wide range of applications. Whether you're in the medical, industrial, or research field, this product offers unparalleled value and benefits. Upgrade your equipment today with the DL-7140-201S and experience the advantages of superior performance and precision.

Feature Benefit Bullets

Maximum Forward Current: 0.14 A

Higher maximum forward current allows for more efficient and powerful operation of the laser diode.

Peak Wavelength (nm): 785

The specific peak wavelength of 785 nm ensures precision and accuracy in applications requiring this wavelength.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product provides a coherent and concentrated light output suitable for various applications such as telecommunications, medical equipment, and more.

Maximum Operating Temperature: 60 °C

With a maximum operating temperature of 60 °C, this laser diode can withstand high temperatures and operate reliably in challenging environments.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature of -10 °C ensures that this laser diode can be used in a wide range of temperature conditions without compromising performance.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature offers secure and stable installation of the laser diode, making it suitable for applications where vibration or movement may be a concern.

Maximum Forward Voltage: 2.8 V

The low maximum forward voltage of 2.8 V helps in reducing power consumption and increasing efficiency of the laser diode.

Technical Specifications

Laser Diodes DL-7140-201S attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.14 A

Maximum Forward Voltage:

2.8 V

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

785

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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