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DL-7147-201

Onsemi

DL-7147-201 by Onsemi

DL-7147-201 by Onsemi is a Laser Diode with 0.12A max forward current, peak wavelength of 658nm, and 3V max forward voltage. It operates b/w -10 °C to 75°C, suitable for through hole mounting applications in optoelectronics.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,450 parts In-Stock

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2,450

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Vyrian

USA . 1,951 parts In-Stock

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1,951

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Pegasus Components GmbH

Germany . 100 parts In-Stock

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100

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Kulean Microsystems

USA . 4,305 parts In-Stock

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4,305

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TANS Electronics

Latvia . 2,621 parts In-Stock

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2,621

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Northwest PG Solutions

USA . 1,570 parts In-Stock

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1,570

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UHIMA Technologies

Türkiye . 836 parts In-Stock

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836

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Problanco Electronics

Mexico . 684 parts In-Stock

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684

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Native Components

USA . 587 parts In-Stock

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Corphita

USA . 294 parts In-Stock

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294

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SupplyDigital Components

Austria . 125 parts In-Stock

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Corohmni

South Africa . 103 parts In-Stock

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Overview

Unleash the power of precision with the DL-7147-201 Laser Diode from Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality products that are trusted by professionals worldwide. The DL-7147-201 offers exceptional performance and reliability, making it ideal for a wide range of applications. From cutting-edge medical devices to advanced industrial equipment, this laser diode provides unmatched value, efficiency, and precision. Elevate your projects with the DL-7147-201 and experience the difference that Onsemi quality can make.

Feature Benefit Bullets

Maximum Forward Current: 0.12 A

The low forward current ensures energy efficiency and prolongs the lifespan of the laser diode.

Peak Wavelength (nm): 658

The specified peak wavelength makes this laser diode suitable for specific applications where this wavelength is required.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product offers coherent light output and is suitable for various laser applications.

Maximum Operating Temperature: 75 °C

The high maximum operating temperature allows this laser diode to operate reliably even in demanding environments.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature ensures that this laser diode can function in a wide range of conditions.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature simplifies the installation process and provides a secure mounting mechanism for the diode.

Maximum Forward Voltage: 3 V

The low forward voltage requirement makes this laser diode easy to power and integrate into different systems.

Technical Specifications

Laser Diodes DL-7147-201 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.12 A

Maximum Forward Voltage:

3 V

Mounting Feature:

Maximum Operating Temperature:

75 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

658

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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