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DL-7140-201

Onsemi

DL-7140-201 by Onsemi

DL-7140-201 by Onsemi is a Laser Diode with 0.1A max forward current, 785nm peak wavelength, and -10 to 60 °C operating temp range. Ideal for applications requiring through hole mounting of laser diodes.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,358 parts In-Stock

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Vyrian

USA . 1,038 parts In-Stock

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1,038

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Distributors (Availability)

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Native Components

USA . 394 parts In-Stock

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$0.100

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$0.096

394

$0.100

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$0.096

Northwest PG Solutions

USA . 1,223 parts In-Stock

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$0.110

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$0.097

1,223

$0.110

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$0.097

Problanco Electronics

Mexico . 7,775 parts In-Stock

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7,775

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Kulean Microsystems

USA . 5,447 parts In-Stock

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SupplyDigital Components

Austria . 4,074 parts In-Stock

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4,074

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TANS Electronics

Latvia . 1,706 parts In-Stock

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Corphita

USA . 1,354 parts In-Stock

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UHIMA Technologies

Türkiye . 756 parts In-Stock

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Corohmni

South Africa . 302 parts In-Stock

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Overview

Discover the DL-7140-201 by Onsemi, a high-quality laser diode that offers exceptional performance and reliability. Onsemi, known for their cutting-edge technology and superior manufacturing processes, delivers a product that exceeds industry standards. With applications in various fields such as telecommunications, medical equipment, and industrial processes, this laser diode provides value, efficiency, and precision. Experience the benefits of the DL-7140-201 and take your projects to the next level with advanced optoelectronic solutions.

Feature Benefit Bullets

Maximum Forward Current: 0.1 A

The low maximum forward current ensures efficient use of power and helps in extending the lifespan of the laser diode.

Peak Wavelength (nm): 785

785 nm wavelength is commonly used in various applications such as medical devices, scientific research, and communication systems, making it a versatile choice.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product provides a coherent and focused output beam, making it suitable for applications requiring precision and control.

Maximum Operating Temperature: 60 °C

With a maximum operating temperature of 60 °C, this laser diode can withstand higher temperatures without compromising its performance, ensuring reliability in various environments.

Minimum Operating Temperature: -10 °C

The wide operating temperature range of -10 to 60 °C enables this laser diode to function effectively in both hot and cold conditions, making it versatile for different applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process and provides a secure connection, ensuring stability and ease of integration in various systems.

Technical Specifications

Laser Diodes DL-7140-201 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.1 A

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

785

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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