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CQF23/D52

NXP Semiconductors

CQF23/D52 by NXP Semiconductors

CQF23/D52 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 790 nm and a max forward current of 0.07 A. It operates efficiently b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks in communication systems.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Digiode

USA . 4,429 parts In-Stock

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Vyrian

USA . 3,194 parts In-Stock

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Anansix

USA . 2,293 parts In-Stock

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Native Components

USA . 750 parts In-Stock

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One Stop Electronics

USA . 960 parts In-Stock

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Corphita

USA . 2,317 parts In-Stock

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UNI Independent Distributors

Spain . 2,032 parts In-Stock

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Northwest PG Solutions

USA . 1,648 parts In-Stock

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Overview

Unlock new possibilities in your projects with the CQF23/D52 laser diode from NXP Semiconductors. Renowned for excellence, NXP delivers unmatched reliability and performance, ensuring your applications shine brighter than ever. With its superior efficiency and wide operational range, this diode is perfect for diverse uses—from optical communication to precision measurement. Elevate your innovations and experience the benefits of cutting-edge technology designed for success!

Feature Benefit Bullets

Maximum Forward Current: 0.07 A

This low forward current ensures efficient operation, minimizing power consumption and heat generation, making it suitable for portable applications.

Peak Wavelength: 790 nm

The 790 nm wavelength falls within the near-infrared range, which is ideal for various optoelectronic applications, including optical communication and imaging.

Optoelectronic Type: LASER DIODE

Being a laser diode means it provides highly coherent light, making it perfect for precise applications such as spectroscopy and laser marking.

Maximum Operating Temperature: 60 °C

With a maximum operating temperature of 60 °C, this diode can perform reliably in high-temperature environments.

Minimum Operating Temperature: -10 °C

The ability to function at -10 °C makes this diode suitable for outdoor applications and environments where temperatures may drop significantly.

Maximum Response Time: 0.5 ns

A response time of 0.5 ns ensures rapid signal processing, making it highly effective for high-speed communication systems.

Semiconductor Material: AlGaAs

GaAlAs is known for its efficiency and performance in laser diodes, contributing to high output power and long lifespan.

Spectral Bandwidth: 2 nm

A narrow spectral bandwidth of 2 nm indicates high spectral purity, which is beneficial for applications requiring precision in wavelength, such as in sensors.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting provides robust mechanical support, ensuring stability in various mounting environments, which is crucial for reliable operation.

Maximum Forward Voltage: 2.5 V

A maximum forward voltage of 2.5 V allows for compatibility with a wide range of electronic devices, facilitating easy integration into existing systems.

Technical Specifications

Laser Diodes CQF23/D52 attributes and parameters. Explore more Laser Diodes devices from NXP Semiconductors

Specs

Maximum Forward Current:

.07 A

Maximum Forward Voltage:

2.5 V

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

790

Maximum Response Time:

.0000000005 s

Semiconductor Material:

AlGaAs

Spectral Bandwidth:

2 m

Sub-Category:

Laser Diodes

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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