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CQF23/D41

NXP Semiconductors

CQF23/D41 by NXP Semiconductors

CQF23/D41 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 790 nm and a max forward current of 0.07 A. It operates efficiently b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks in communication systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 4,085 parts In-Stock

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Digiode

USA . 3,435 parts In-Stock

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Anansix

USA . 722 parts In-Stock

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722

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Native Components

USA . 512 parts In-Stock

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$1.339

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$1.339

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Northwest PG Solutions

USA . 1,234 parts In-Stock

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$1.473

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$1.473

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One Stop Electronics

USA . 312 parts In-Stock

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$8.100

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Corphita

USA . 4,634 parts In-Stock

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UNI Independent Distributors

Spain . 2,937 parts In-Stock

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Overview

Unlock a world of precision and performance with the CQF23/D41 laser diode from NXP Semiconductors. Renowned for their commitment to quality, NXP delivers exceptional reliability in every product, making this diode perfect for advanced applications in telecommunications, medical devices, and industrial automation. With its efficient design and robust operating range, the CQF23/D41 ensures optimal functionality, empowering your innovations with unmatched speed and accuracy. Experience the advantages today!

Feature Benefit Bullets

Maximum Forward Current: 0.07 A

With a maximum forward current of just 0.07 A, this laser diode is energy-efficient and suitable for low-power applications, ensuring minimal thermal stress and longer operational life.

Peak Wavelength: 790 nm

The peak wavelength of 790 nm makes this laser diode ideal for applications in optical communication and data transmission, as well as being suited for various sensing applications.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product provides coherent light, making it perfect for precision applications, including laser displays, optical storage devices, and industrial laser processing.

Maximum Operating Temperature: 60 °C

The capability to operate at temperatures up to 60 °C ensures reliable performance in warmer environments, making it versatile for many industrial applications.

Minimum Operating Temperature: -10 °C

With a minimum operating temperature of -10 °C, this laser diode is capable of functioning in colder environments, which enhances its applicability in varied climatic conditions.

Maximum Response Time: 0.5 ns

The extremely fast response time of 0.5 ns allows this laser diode to be used in high-speed communication systems, rendering it suitable for demanding applications like telecommunications.

Semiconductor Material: AlGaAs

The use of AlGaAs semiconductor material enhances the efficiency and performance of the laser, contributing to its higher output power and better temperature stability.

Spectral Bandwidth: 2 nm

The narrow spectral bandwidth of 2 nm indicates high coherence and precision in applications such as spectroscopy and laser cutting, ensuring high quality and accuracy.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature makes installation easy and secure, providing excellent mechanical stability and reliability in diverse applications.

Maximum Forward Voltage: 2.5 V

With a maximum forward voltage of 2.5 V, this laser diode is compatible with a wide range of electronic circuits, allowing for easy integration into various systems.

Technical Specifications

Laser Diodes CQF23/D41 attributes and parameters. Explore more Laser Diodes devices from NXP Semiconductors

Specs

Maximum Forward Current:

.07 A

Maximum Forward Voltage:

2.5 V

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

790

Maximum Response Time:

.0000000005 s

Semiconductor Material:

AlGaAs

Spectral Bandwidth:

2 m

Sub-Category:

Laser Diodes

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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