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CQF25A/D11

NXP Semiconductors

CQF25A/D11 by NXP Semiconductors

CQF25A/D11 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 820 nm and a max forward current of 0.15 A. It operates efficiently b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks in communication systems.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Anansix

USA . 2,772 parts In-Stock

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Vyrian

USA . 2,199 parts In-Stock

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Digiode

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Native Components

USA . 310 parts In-Stock

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$0.082

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Northwest PG Solutions

USA . 1,903 parts In-Stock

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$0.094

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One Stop Electronics

USA . 793 parts In-Stock

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$14.100

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UNI Independent Distributors

Spain . 5,536 parts In-Stock

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Corphita

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Overview

Unlock unparalleled performance with the CQF25A/D11 laser diode from NXP Semiconductors, a trusted leader in innovation. Offering exceptional reliability and efficiency, this component is perfect for a wide range of applications including medical devices, industrial automation, and telecommunications. With its robust design and superior temperature range, it ensures optimal functionality, allowing you to elevate your projects while enjoying peace of mind and long-lasting value.

Feature Benefit Bullets

Maximum Forward Current: 0.15 A

This relatively low maximum forward current allows for efficient operation, making it suitable for battery-powered applications and minimizing heat generation.

Peak Wavelength: 820 nm

The 820 nm wavelength makes this laser diode ideal for various applications, including optical communications and sensors, providing effective performance in those domains.

Optoelectronic Type: LASER DIODE

As a laser diode, this product offers coherent light emission, making it perfect for applications that require precision and high-intensity light.

Maximum Operating Temperature: 60 °C

The ability to operate at temperatures up to 60 °C enhances reliability and suitability for tough environmental conditions, ensuring longevity.

Minimum Operating Temperature: -10 °C

This wide temperature range allows for versatility in applications, making it ideal for outdoor or varying climate environments.

Maximum Response Time: 0.0000000005 s

With an exceptionally fast response time, this laser diode can be used in high-speed communication systems and time-sensitive applications.

Semiconductor Material: AlGaAs

The use of AlGaAs semiconductor material enhances efficiency in light emission and ensures better performance under various operating conditions.

Spectral Bandwidth: 4.5 nm

A spectral bandwidth of 4.5 nm allows for good modulation capabilities, making this diode suitable for applications requiring effective data transmission.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mount provides ease of installation and robust mechanical stability, making it beneficial for complex circuit designs.

Maximum Forward Voltage: 2.5 V

With a maximum forward voltage of 2.5 V, this laser diode ensures compatibility with standard power supplies while optimizing energy consumption.

Technical Specifications

Laser Diodes CQF25A/D11 attributes and parameters. Explore more Laser Diodes devices from NXP Semiconductors

Specs

Maximum Forward Current:

.15 A

Maximum Forward Voltage:

2.5 V

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

820

Maximum Response Time:

.0000000005 s

Semiconductor Material:

AlGaAs

Spectral Bandwidth:

4.5 m

Sub-Category:

Laser Diodes

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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