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CQF25A/D14

NXP Semiconductors

CQF25A/D14 by NXP Semiconductors

CQF25A/D14 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 820 nm and a max forward current of 0.15 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 4,184 parts In-Stock

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Vyrian

USA . 2,957 parts In-Stock

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Anansix

USA . 113 parts In-Stock

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Native Components

USA . 991 parts In-Stock

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$0.038

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$0.036

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One Stop Electronics

USA . 1,579 parts In-Stock

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$17.100

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Corphita

USA . 4,864 parts In-Stock

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Northwest PG Solutions

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UNI Independent Distributors

Spain . 455 parts In-Stock

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Overview

Unlock the potential of your projects with the CQF25A/D14 laser diode from NXP Semiconductors, a trusted leader in high-quality optoelectronics. Designed for superior performance, this diode delivers exceptional reliability and fast response times, making it ideal for a variety of applications from telecommunications to medical devices. Experience enhanced efficiency and precision, ensuring your innovations shine brighter than ever!

Feature Benefit Bullets

Maximum Forward Current: 0.15 A

This low maximum forward current allows for energy-efficient operation, making it suitable for battery-powered applications.

Peak Wavelength: 820 nm

The 820 nm peak wavelength is ideal for various optical applications, including sensing and data transmission, ensuring high performance in specific use cases.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product offers coherent light output, which is beneficial for precision applications such as optical communication and laser ranging.

Maximum Operating Temperature: 60 °C

With a maximum operating temperature of 60 °C, this laser diode can function in diverse environmental conditions, enhancing its versatility for various applications.

Minimum Operating Temperature: -10 °C

This allows for reliable performance in colder environments, making it suitable for outdoor or low-temperature applications.

Maximum Response Time: 0.0000000005 s

The ultra-fast response time ensures high-speed operation, making it excellent for applications requiring quick signal processing or modulation.

Semiconductor Material: AlGaAs

AlGaAs offers superior efficiency and thermal stability, which enhances the overall performance and longevity of the laser diode.

Spectral Bandwidth: 4.5 nm

The narrow spectral bandwidth ensures minimal dispersion, beneficial for high-precision applications in data transmission and imaging.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mount feature allows for easy and reliable integration into various circuit designs, improving design flexibility.

Maximum Forward Voltage: 2.5 V

A maximum forward voltage of 2.5 V means lower energy consumption, which is advantageous for efficiency and heat management in electronic systems.

Technical Specifications

Laser Diodes CQF25A/D14 attributes and parameters. Explore more Laser Diodes devices from NXP Semiconductors

Specs

Maximum Forward Current:

.15 A

Maximum Forward Voltage:

2.5 V

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

820

Maximum Response Time:

.0000000005 s

Semiconductor Material:

AlGaAs

Spectral Bandwidth:

4.5 m

Sub-Category:

Laser Diodes

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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