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SDL8033-101

Onsemi

SDL8033-101 by Onsemi

SDL8033-101 by Onsemi is an 870nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in optoelectronics and telecommunications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Digiode

USA . 1,366 parts In-Stock

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Vyrian

USA . 478 parts In-Stock

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Problanco Electronics

Mexico . 7,953 parts In-Stock

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SupplyDigital Components

Austria . 3,863 parts In-Stock

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TANS Electronics

Latvia . 1,229 parts In-Stock

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Kulean Microsystems

USA . 512 parts In-Stock

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UHIMA Technologies

Türkiye . 470 parts In-Stock

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Corohmni

South Africa . 99 parts In-Stock

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Corphita

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Overview

Experience the superior quality and reliability of Onsemi with the SDL8033-101 Laser Diode. This cutting-edge product offers a peak wavelength of 870nm, making it ideal for a wide range of applications. Whether you're working on medical equipment, optical communications, or industrial sensors, this laser diode will exceed your expectations. Trust in Onsemi's reputation for excellence and choose the SDL8033-101 for unmatched performance and value.

Feature Benefit Bullets

Peak Wavelength (nm): 870

The peak wavelength of 870 nm offers a good balance between penetration depth and absorption, making this laser diode suitable for various applications including medical, industrial, and research purposes.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product provides highly coherent and directional light output, making it ideal for applications such as laser pointers, barcode scanners, and optical communications.

Maximum Operating Temperature: 50 °C

With a maximum operating temperature of 50 °C, this laser diode can withstand relatively high temperatures, making it suitable for applications where heat dissipation is a concern.

Minimum Operating Temperature: -10 °C

The ability to operate at temperatures as low as -10 °C ensures that this laser diode can be used in a wide range of environments, including cold storage facilities and outdoor applications.

Semiconductor Material: GaAlAs

GaAlAs is a popular semiconductor material for laser diodes due to its high efficiency and reliability. This material choice ensures that the diode delivers consistent performance over time.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature allows for easy and secure installation of the laser diode onto a circuit board or heatsink, ensuring stable operation and facilitating integration into various electronic devices.

Technical Specifications

Laser Diodes SDL8033-101 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

870

Semiconductor Material:

GaAlAs

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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