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SDL8031-201

Onsemi

SDL8031-201 by Onsemi

SDL8031-201 by Onsemi is an 810nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for medical devices, industrial sensors, and optical communication applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,878 parts In-Stock

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Vyrian

USA . 1,520 parts In-Stock

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Kulean Microsystems

USA . 7,243 parts In-Stock

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SupplyDigital Components

Austria . 4,491 parts In-Stock

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Problanco Electronics

Mexico . 3,487 parts In-Stock

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TANS Electronics

Latvia . 2,167 parts In-Stock

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Corphita

USA . 1,915 parts In-Stock

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UHIMA Technologies

Türkiye . 970 parts In-Stock

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Corohmni

South Africa . 484 parts In-Stock

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Overview

Experience the unparalleled quality and innovation of Onsemi with the SDL8031-201 Laser Diode. Known for their cutting-edge technology and superior manufacturing processes, Onsemi's laser diodes are designed to deliver exceptional performance and reliability. Whether used in medical equipment, industrial applications, or telecommunications devices, this laser diode offers unmatched value, precision, and efficiency. Trust Onsemi to provide you with the best solutions for your optical needs.

Feature Benefit Bullets

Peak Wavelength (nm): 810

The peak wavelength of 810nm is ideal for various applications in areas such as telecommunications, medical devices, and industrial processes.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product provides a compact and efficient light source for applications requiring precision and control over the emitted light.

Maximum Operating Temperature: 50 °C

With a high maximum operating temperature of 50 °C, this laser diode can withstand demanding environments and extended operational periods without overheating.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature of -10 °C ensures reliable performance even in cold conditions, making it suitable for a wide range of environments.

Semiconductor Material: GaAlAs

The use of GaAlAs semiconductor material ensures high efficiency and reliability, guaranteeing consistent performance over the product's lifespan.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature enables easy installation and secure fixation of the laser diode, allowing for stable operation even in vibrating or high-impact environments.

Technical Specifications

Laser Diodes SDL8031-201 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

810

Semiconductor Material:

GaAlAs

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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