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DL-4148-021

Onsemi

DL-4148-021 by Onsemi

DL-4148-021 by Onsemi is a LASER DIODE with Peak Wavelength of 635nm, Max Forward Current of 0.08A, and Max Forward Voltage of 2.5V. It operates b/w -10 °C to 40°C, suitable for THROUGH HOLE MOUNT applications in various industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

< 1k

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Digiode

USA . 347 parts In-Stock

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Vyrian

USA . 316 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 147 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 704 parts In-Stock

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$0.554

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704

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Northwest PG Solutions

USA . 503 parts In-Stock

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$0.610

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Kulean Microsystems

USA . 5,741 parts In-Stock

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TANS Electronics

Latvia . 4,359 parts In-Stock

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SupplyDigital Components

Austria . 3,462 parts In-Stock

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Problanco Electronics

Mexico . 1,635 parts In-Stock

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UHIMA Technologies

Türkiye . 402 parts In-Stock

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Perfect Parts

USA . 329 parts In-Stock

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Corohmni

South Africa . 164 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 147 parts In-Stock

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Glotronic Ltd.

UK . 118 parts In-Stock

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Corphita

USA . 88 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the DL-4148-021 laser diode by Onsemi. Crafted with precision and expertise, this reliable diode offers unparalleled performance for a wide range of applications. From industrial machinery to medical equipment, this versatile component delivers exceptional quality and efficiency. Experience the difference with Onsemi's dedication to innovation and excellence, and elevate your projects with the DL-4148-021 laser diode today.

Feature Benefit Bullets

Maximum Forward Current: 0.08 A

Low forward current ensures efficient power consumption and longer lifespan of the laser diode.

Peak Wavelength (nm): 635

635nm wavelength is commonly used in various applications such as medical devices, laser pointers, and communication systems.

Optoelectronic Type: LASER DIODE

Being a laser diode, it offers high coherence and monochromaticity, making it suitable for precision applications like laser cutting and laser printing.

Maximum Operating Temperature: 40 °C

With a maximum operating temperature of 40 °C, this laser diode can function reliably in a wide range of environments.

Minimum Operating Temperature: -10 °C

The ability to operate at temperatures as low as -10 °C makes this laser diode suitable for use in cold or outdoor environments.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting provides a secure and stable connection, ensuring the laser diode stays in place during operation.

Maximum Forward Voltage: 2.5 V

Low forward voltage minimizes power losses and heat generation, making the laser diode more energy-efficient.

Technical Specifications

Laser Diodes DL-4148-021 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.08 A

Maximum Forward Voltage:

2.5 V

Mounting Feature:

Maximum Operating Temperature:

40 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

635

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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