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DL-4146-101S

Onsemi

DL-4146-101S by Onsemi

DL-4146-101S by Onsemi is a laser diode with peak wavelength of 405nm, nominal output power of 10W, and max threshold current of 50mA. Commonly used in applications requiring optoelectronic components for through hole mounting setups.

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Digiode

USA . 1,392 parts In-Stock

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Vyrian

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Native Components

USA . 766 parts In-Stock

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Northwest PG Solutions

USA . 2,297 parts In-Stock

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Kepictronics

USA . 20,000 parts In-Stock

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Problanco Electronics

Mexico . 6,007 parts In-Stock

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Kulean Microsystems

USA . 3,851 parts In-Stock

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TANS Electronics

Latvia . 1,554 parts In-Stock

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Corohmni

South Africa . 316 parts In-Stock

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SupplyDigital Components

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UHIMA Technologies

Türkiye . 144 parts In-Stock

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Corphita

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Overview

Experience the cutting-edge technology of the DL-4146-101S laser diode by Onsemi, a leading manufacturer in the industry. With its common cathode configuration and built-in photo diode, this laser diode delivers peak performance at a peak wavelength of 405nm. Whether used in industrial, medical, or consumer applications, this round-shaped diode offers a nominal output power of 10W and a maximum threshold current of 50mA to ensure optimal efficiency. Trust Onsemi for quality and reliability, and elevate your projects with the DL-4146-101S laser diode.

Feature Benefit Bullets

Configuration: COMMON CATHODE 2 ELEMENTS WITH BUILT-IN PHOTO DIODE

This configuration allows for efficient operation and integration of multiple elements in the laser diode, resulting in improved performance and reliability.

Peak Wavelength (nm): 405

The 405nm wavelength is ideal for a wide range of applications including industrial, medical, and scientific research, making this laser diode versatile and suitable for various uses.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product provides a stable and powerful output beam, making it suitable for precision applications such as cutting, engraving, and laser therapy.

Maximum Operating Temperature: 75 °C

With a high maximum operating temperature of 75 °C, this laser diode can withstand challenging environments and extended usage without compromising performance.

Shape: ROUND

The round shape of this laser diode allows for easy integration into various systems and applications, providing flexibility in design and installation.

Maximum Threshold Current: 50 mA

Having a maximum threshold current of 50mA ensures efficient and stable operation of the laser diode, minimizing the risk of overheating or damage during use.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature of 0 °C enables the laser diode to start up quickly and perform reliably even in cold environments, enhancing its usability.

Nominal Output Power: 10 W

With a high nominal output power of 10W, this laser diode is capable of delivering strong and consistent laser beams, making it suitable for demanding applications that require precision and accuracy.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature simplifies the installation process of the laser diode, ensuring secure and stable placement in various devices and systems.

Technical Specifications

Laser Diodes DL-4146-101S attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Configuration:

COMMON CATHODE 2 ELEMENTS WITH BUILT-IN PHOTO DIODE

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

75 Cel

Minimum Operating Temperature:

0 Cel

Optoelectronic Type:

Nominal Output Power:

10 W

Peak Wavelength (nm):

405

Shape:

ROUND

Maximum Threshold Current:

50 mA

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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