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DL4140-001

Onsemi

DL4140-001 by Onsemi

DL4140-001 by Onsemi is a LASER DIODE with 785nm Peak Wavelength, 0.06A Max Forward Current, and -10 to 50 °C Operating Temperature. Ideal for applications requiring precise laser emission such as medical devices, optical communication systems, and industrial sensors.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,714 parts In-Stock

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1,714

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Digiode

USA . 757 parts In-Stock

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757

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Distributors (Availability)

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Native Components

USA . 38 parts In-Stock

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$4.960

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38

$4.960

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Kulean Microsystems

USA . 7,555 parts In-Stock

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7,555

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TANS Electronics

Latvia . 4,626 parts In-Stock

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Corphita

USA . 2,154 parts In-Stock

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Northwest PG Solutions

USA . 1,859 parts In-Stock

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$4.861

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1,859

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$4.861

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Problanco Electronics

Mexico . 1,769 parts In-Stock

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1,769

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SupplyDigital Components

Austria . 1,144 parts In-Stock

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Corohmni

South Africa . 96 parts In-Stock

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UHIMA Technologies

Türkiye . 17 parts In-Stock

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Overview

Unleash the power of precision with the DL4140-001 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality laser diodes that are guaranteed to exceed your expectations. Whether you're looking to enhance your industrial processes, medical equipment, or measurement tools, this versatile product offers unmatched reliability and performance. Say goodbye to downtime and hello to seamless operations with the DL4140-001, where quality meets innovation.

Feature Benefit Bullets

Maximum Forward Current: 0.06 A

A low maximum forward current helps in increasing the efficiency and lifespan of the laser diode by preventing overheating.

Peak Wavelength (nm): 785

785nm wavelength is commonly used in various applications such as telecommunications, medical devices, and industrial processes, making this laser diode versatile.

Optoelectronic Type: LASER DIODE

The optoelectronic type being a laser diode ensures high precision and accuracy in applications such as laser cutting, medical treatments, and scientific research.

Maximum Operating Temperature: 50 °C

The high maximum operating temperature of 50 °C allows this laser diode to be used in environments with higher temperatures without the risk of damage.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature of -10 °C ensures that this laser diode can still function optimally in colder environments without performance degradation.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature provides a secure and stable mounting option for the laser diode, ensuring reliable performance in various applications.

Technical Specifications

Laser Diodes DL4140-001 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.06 A

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

785

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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