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DL-4147-062

Onsemi

DL-4147-062 by Onsemi

DL-4147-062 by Onsemi is a LASER DIODE with 0.07A max forward current, emitting at 650nm peak wavelength. It operates b/w -10 °C to 70°C, with a max forward voltage of 2.6V. Ideal for applications requiring precise optical emission in through-hole mounting configurations.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Digiode

USA . 1,626 parts In-Stock

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Vyrian

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Kulean Microsystems

USA . 5,791 parts In-Stock

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TANS Electronics

Latvia . 4,922 parts In-Stock

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Problanco Electronics

Mexico . 4,786 parts In-Stock

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SupplyDigital Components

Austria . 4,001 parts In-Stock

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Corphita

USA . 2,384 parts In-Stock

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UHIMA Technologies

Türkiye . 652 parts In-Stock

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Corohmni

South Africa . 448 parts In-Stock

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Northwest PG Solutions

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Native Components

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Overview

Experience precision and reliability like never before with the DL-4147-062 by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and performance in their Laser Diodes category. Ideal for a wide range of applications, this product offers exceptional value and benefits to customers seeking cutting-edge technology. Elevate your projects with the DL-4147-062 and witness unparalleled efficiency and accuracy in every use.

Feature Benefit Bullets

Maximum Forward Current: 0.07 A

This laser diode can operate at a maximum forward current of 0.07 A, allowing for efficient power usage and preventing overheating.

Peak Wavelength (nm): 650

The peak wavelength of 650 nm ensures consistent and precise laser output, making it suitable for various applications such as optical communication and sensing.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product emits a coherent beam of light, making it ideal for applications requiring high intensity and focused light output.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, this laser diode can withstand high temperature environments, increasing its reliability and longevity.

Minimum Operating Temperature: -10 °C

The ability to operate at a minimum temperature of -10 °C allows this laser diode to function in cold environments without compromising performance.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature of this laser diode makes it easy to integrate into electronic circuits and provides a secure and stable mounting solution.

Maximum Forward Voltage: 2.6 V

With a maximum forward voltage of 2.6 V, this laser diode can operate efficiently and reliably with low power consumption, making it cost-effective for long-term use.

Technical Specifications

Laser Diodes DL-4147-062 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.07 A

Maximum Forward Voltage:

2.6 V

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

650

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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