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DL-4147-162

Onsemi

DL-4147-162 by Onsemi

DL-4147-162 by Onsemi is a 1mm LASER DIODE with peak wavelength of 650nm. It has max threshold current of 50mA and nominal output power of 12W. Ideal for applications requiring precise laser emission in compact spaces at temperatures ranging from -10 to 70 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,862 parts In-Stock

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Digiode

USA . 739 parts In-Stock

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739

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Distributors (Availability)

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Native Components

USA . 325 parts In-Stock

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$0.250

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$0.240

325

$0.250

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$0.240

Northwest PG Solutions

USA . 2,196 parts In-Stock

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$0.275

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$0.243

2,196

$0.275

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$0.243

TANS Electronics

Latvia . 7,992 parts In-Stock

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7,992

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Problanco Electronics

Mexico . 7,691 parts In-Stock

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7,691

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SupplyDigital Components

Austria . 5,241 parts In-Stock

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Corphita

USA . 1,872 parts In-Stock

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Kulean Microsystems

USA . 1,040 parts In-Stock

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UHIMA Technologies

Türkiye . 336 parts In-Stock

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Corohmni

South Africa . 154 parts In-Stock

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Overview

Elevate your projects with the DL-4147-162 by Onsemi, a top-tier manufacturer renowned for their superior quality in laser diodes. With a peak wavelength of 650 nm and a nominal output power of 12 W, this laser diode offers unmatched precision and performance. Ideal for applications in telecommunications, industrial manufacturing, and medical devices, the DL-4147-162 provides customers with reliable and efficient solutions for their needs. Experience the value and benefits of this cutting-edge technology, setting you apart from the competition.

Feature Benefit Bullets

Configuration: SINGLE WITH BUILT-IN PHOTO DIODE

Having a built-in photodiode allows for easy monitoring and control of the laser output, increasing precision and efficiency.

Size: 1 mm

Compact size makes it suitable for a wide range of applications where space is limited.

Peak Wavelength (nm): 650

The specific peak wavelength of 650 nm makes this laser diode ideal for applications requiring this specific wavelength.

Optoelectronic Type: LASER DIODE

As a laser diode, this product provides a coherent and focused beam of light, making it suitable for various optical applications.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature of 70 °C, this laser diode can withstand elevated temperatures, increasing its reliability and versatility.

Shape: ROUND

The round shape of this laser diode allows for easy integration into different optical systems and setups.

Maximum Threshold Current: 50 mA

The high maximum threshold current of 50 mA indicates the robustness and durability of this laser diode, ensuring stable performance over time.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature of -10 °C ensures reliable performance even in colder environments.

Nominal Output Power: 12 W

With a nominal output power of 12W, this laser diode delivers high power output for demanding applications that require intense laser beams.

Technical Specifications

Laser Diodes DL-4147-162 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Configuration:

SINGLE WITH BUILT-IN PHOTO DIODE

No. of Functions:

1

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Nominal Output Power:

12 W

Peak Wavelength (nm):

650

Shape:

ROUND

Size:

1 mm

Maximum Threshold Current:

50 mA

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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