Loading...

DL-LS1061

Onsemi

DL-LS1061 by Onsemi

DL-LS1061 by Onsemi is a Laser Diode with 0.115A max forward current, peak wavelength of 658nm, and 3V max forward voltage. It operates b/w -10 °C to 70°C, suitable for through hole mounting applications in various industries.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,573 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,573

-

-

-

-

Digiode

USA . 790 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

790

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 19 parts In-Stock

1+ parts

$0.560

100+ parts

-

1k+ parts

-

10k+ parts

-

19

$0.560

-

-

-

Northwest PG Solutions

USA . 1,904 parts In-Stock

1+ parts

$0.616

100+ parts

-

1k+ parts

-

10k+ parts

-

1,904

$0.616

-

-

-

Kulean Microsystems

USA . 7,922 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,922

-

-

-

-

Problanco Electronics

Mexico . 7,453 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,453

-

-

-

-

TANS Electronics

Latvia . 6,153 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,153

-

-

-

-

SupplyDigital Components

Austria . 5,912 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,912

-

-

-

-

UHIMA Technologies

Türkiye . 576 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

576

-

-

-

-

Corohmni

South Africa . 142 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

142

-

-

-

-

Corphita

USA . 82 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

82

-

-

-

-

Overview

Enhance your projects with the DL-LS1061 Laser Diode by Onsemi! Known for their top-quality products, Onsemi delivers reliable and efficient solutions for a wide range of applications. The DL-LS1061 offers exceptional performance and precision, making it the perfect choice for laser-based projects. With a peak wavelength of 658 nm and a maximum forward current of 0.115 A, this laser diode ensures optimal results every time. Trust Onsemi to provide you with cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Maximum Forward Current: 0.115 A

This high current rating allows for efficient performance and longer lifespan of the laser diode.

Peak Wavelength (nm): 658

The specific peak wavelength of 658nm makes this laser diode suitable for various applications such as medical devices or telecommunications.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product offers precise and focused emission of light, making it ideal for applications requiring accuracy and control.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this laser diode can withstand demanding environmental conditions without compromising its performance.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature allows this laser diode to function reliably even in cold environments, making it versatile and dependable.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mount design makes installation and integration of this laser diode easy and convenient, saving time and effort.

Maximum Forward Voltage: 3 V

The low forward voltage requirement of 3V ensures efficient power consumption and reduced heat generation, contributing to the overall reliability of the product.

Technical Specifications

Laser Diodes DL-LS1061 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.115 A

Maximum Forward Voltage:

3 V

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

658

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20