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CQF25C/D13

NXP Semiconductors

CQF25C/D13 by NXP Semiconductors

CQF25C/D13 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 875 nm and a max forward current of 0.15 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 3,995 parts In-Stock

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Digiode

USA . 921 parts In-Stock

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921

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Anansix

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96

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One Stop Electronics

USA . 1,539 parts In-Stock

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$20.100

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Native Components

USA . 188 parts In-Stock

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$362.277

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$355.032

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$351.409

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$347.786

188

$362.277

$355.032

$351.409

$347.786

Northwest PG Solutions

USA . 2,082 parts In-Stock

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$398.505

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UNI Independent Distributors

Spain . 8,208 parts In-Stock

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Corphita

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Overview

Unlock the power of precision with the CQF25C/D13 laser diode from NXP Semiconductors. Renowned for their commitment to quality, NXP delivers unmatched reliability and performance in every component. This high-efficiency laser diode is perfect for applications ranging from industrial automation to medical devices, providing exceptional wavelength stability and rapid response times. Elevate your projects with NXP—where innovation meets excellence!

Feature Benefit Bullets

Maximum Forward Current: 0.15 A

The low maximum forward current makes this laser diode efficient and suitable for battery-operated devices.

Peak Wavelength: 875 nm

The peak wavelength is in the near-infrared range, ideal for applications like optical communication and sensing.

Optoelectronic Type: LASER DIODE

As an optoelectronic device, this laser diode offers high performance with reliable light emission for various applications.

Maximum Operating Temperature: 60 °C

With a maximum operating temperature of 60 °C, this laser diode can function effectively in warmer environments.

Minimum Operating Temperature: -10 °C

The ability to operate at temperatures as low as -10 °C makes this diode suitable for outdoor and cold-environment applications.

Maximum Response Time: 0.5 ns

The fast response time ensures high-speed data transmission, making it a great choice for time-sensitive applications.

Semiconductor Material: AlGaAs

Utilizing AlGaAs as the semiconductor material ensures high efficiency and performance, enhancing the overall functionality.

Spectral Bandwidth: 4.5 nm

A narrow spectral bandwidth reduces interference and ensures better signal quality in communication applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process and provides robust mechanical support.

Maximum Forward Voltage: 2.5 V

The low maximum forward voltage allows for energy-efficient operation, minimizing power consumption.

Technical Specifications

Laser Diodes CQF25C/D13 attributes and parameters. Explore more Laser Diodes devices from NXP Semiconductors

Specs

Maximum Forward Current:

.15 A

Maximum Forward Voltage:

2.5 V

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

875

Maximum Response Time:

.0000000005 s

Semiconductor Material:

AlGaAs

Spectral Bandwidth:

4.5 m

Sub-Category:

Laser Diodes

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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