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SDL8031-101

Onsemi

SDL8031-101 by Onsemi

SDL8031-101 by Onsemi is an 815nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications in optoelectronics.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 2,469 parts In-Stock

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Vyrian

USA . 2,421 parts In-Stock

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SupplyDigital Components

Austria . 6,820 parts In-Stock

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Corphita

USA . 2,357 parts In-Stock

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Problanco Electronics

Mexico . 1,755 parts In-Stock

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TANS Electronics

Latvia . 1,006 parts In-Stock

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Kulean Microsystems

USA . 201 parts In-Stock

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Corohmni

South Africa . 154 parts In-Stock

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UHIMA Technologies

Türkiye . 51 parts In-Stock

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Overview

Enhance your projects with the SDL8031-101 Laser Diode by Onsemi! With a peak wavelength of 815nm, this high-quality component is perfect for a wide range of applications. Onsemi's reputation for excellence ensures reliability and performance. From medical equipment to industrial machinery, this laser diode delivers precise and consistent results. Experience the value and benefits of this cutting-edge technology today!

Feature Benefit Bullets

Peak Wavelength (nm): 815

The peak wavelength of 815nm ensures high precision and accuracy in applications requiring a specific wavelength for optimal performance.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product offers high efficiency and reliability in converting electrical energy into coherent light, making it ideal for various optical applications.

Maximum Operating Temperature: 50 °C

With a maximum operating temperature of 50 °C, this laser diode can withstand relatively high temperatures, ensuring stable performance even in demanding environments.

Minimum Operating Temperature: -10 °C

The minimum operating temperature of -10 °C allows this laser diode to operate effectively in cold conditions, making it suitable for a wide range of temperature environments.

Semiconductor Material: GaAlAs

Utilizing GaAlAs semiconductor material offers high output power and efficiency, making this laser diode a reliable choice for demanding applications that require precise and consistent performance.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mount design provides easy and secure installation of the laser diode, ensuring stable and reliable operation without the risk of disconnection or misalignment.

Technical Specifications

Laser Diodes SDL8031-101 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

815

Semiconductor Material:

GaAlAs

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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