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CQF25B/D44

NXP Semiconductors

CQF25B/D44 by NXP Semiconductors

CQF25B/D44 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 850 nm and a max forward current of 0.15 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for data communication systems.

Median Price

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3

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1k+

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Digiode

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Anansix

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Vyrian

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One Stop Electronics

USA . 1,453 parts In-Stock

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Corphita

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Northwest PG Solutions

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UNI Independent Distributors

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Native Components

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Overview

Elevate your projects with the CQF25B/D44 laser diode from NXP Semiconductors, a leader in high-quality semiconductor solutions. Designed for reliability and precision, this versatile component shines in applications like optical communication and industrial automation. Experience superior performance even in challenging environments, ensuring longevity and efficiency. Choose NXP and unlock a future of innovation with products that deliver unmatched value and performance.

Feature Benefit Bullets

Maximum Forward Current: 0.15 A

This relatively low maximum forward current allows for efficient power consumption, making the product suitable for battery-operated devices.

Peak Wavelength: 850 nm

The 850 nm wavelength is optimal for various applications, including optical fiber communication, enhancing its versatility.

Optoelectronic Type: Laser Diode

As a laser diode, this product offers coherent light output, making it ideal for applications requiring high precision and intensity.

Maximum Operating Temperature: 60 °C

With a high maximum operating temperature, this product can function effectively in demanding environments, increasing its reliability.

Minimum Operating Temperature: -10 °C

The capability to operate at low temperatures allows for use in outdoor or colder environments without performance degradation.

Maximum Response Time: 0.5 ns

A very short response time enables fast switching and modulation, making this diode suitable for high-speed communication applications.

Semiconductor Material: AlGaAs

The use of AlGaAs material ensures efficient light emission and enhances performance in infrared applications, providing superior quality.

Spectral Bandwidth: 4.5 nm

A narrow spectral bandwidth indicates that the laser can produce more focused light output, which is beneficial for applications requiring precision.

Mounting Feature: Through Hole Mount

The through-hole mounting feature allows for easy integration into various PCB designs, facilitating streamlined manufacturing.

Maximum Forward Voltage: 2.5 V

A low maximum forward voltage allows this diode to operate efficiently with minimal energy loss, making it ideal for energy-sensitive applications.

Technical Specifications

Laser Diodes CQF25B/D44 attributes and parameters. Explore more Laser Diodes devices from NXP Semiconductors

Specs

Maximum Forward Current:

.15 A

Maximum Forward Voltage:

2.5 V

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

850

Maximum Response Time:

.0000000005 s

Semiconductor Material:

AlGaAs

Spectral Bandwidth:

4.5 m

Sub-Category:

Laser Diodes

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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