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CQF25B/D12

NXP Semiconductors

CQF25B/D12 by NXP Semiconductors

CQF25B/D12 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 850 nm and a max forward current of 0.15 A. It operates efficiently b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for data communication systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,607 parts In-Stock

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Digiode

USA . 1,401 parts In-Stock

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Anansix

USA . 107 parts In-Stock

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107

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One Stop Electronics

USA . 1,382 parts In-Stock

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$0.100

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$0.100

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Native Components

USA . 178 parts In-Stock

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$0.297

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$0.285

178

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Northwest PG Solutions

USA . 2,144 parts In-Stock

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$0.326

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$0.288

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$0.288

UNI Independent Distributors

Spain . 3,840 parts In-Stock

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Corphita

USA . 1,764 parts In-Stock

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Overview

Experience unparalleled performance with the CQF25B/D12 laser diode from NXP Semiconductors, a leader in cutting-edge technology. This high-quality component delivers exceptional reliability and efficiency, making it perfect for diverse applications like optical communication, sensing, and industrial automation. With its robust temperature range and quick response time, customers can trust this laser diode to enhance their projects, ensuring superior results and lasting value. Choose NXP and empower your innovations!

Feature Benefit Bullets

Maximum Forward Current: 0.15 A

The maximum forward current of 0.15 A indicates efficient power usage, making this diode suitable for a variety of applications without risking overheating.

Peak Wavelength: 850 nm

The 850 nm wavelength is ideal for multiple applications including optical communications and sensing, ensuring compatibility with common fiber optics.

Optoelectronic Type: LASER DIODE

As a laser diode, this product offers high coherence and brightness, making it suitable for precision applications like medical equipment and high-speed data transmission.

Maximum Operating Temperature: 60 °C

With a maximum operating temperature of 60 °C, this component is robust enough for various industrial environments, enhancing its reliability in demanding conditions.

Minimum Operating Temperature: -10 °C

The ability to operate down to -10 °C ensures that this laser diode can function in colder environments, expanding its usability in diverse applications.

Maximum Response Time: 0.5 ns

A maximum response time of just 0.5 ns allows for rapid switching capabilities, making this diode ideal for high-speed communication and sensing applications.

Semiconductor Material: AlGaAs

The use of AlGaAs semiconductor material provides high efficiency and good performance in the infrared spectrum, optimizing the laser's output.

Spectral Bandwidth: 4.5 nm

A spectral bandwidth of 4.5 nm allows for versatility in applications where slight variations in wavelength are permissible, enhancing its adaptability in different systems.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies integration into circuits, ensuring ease of installation and robustness in physical and operational performance.

Maximum Forward Voltage: 2.5 V

With a maximum forward voltage of 2.5 V, this diode operates efficiently at low voltage, minimizing power consumption and making it suitable for battery-operated devices.

Technical Specifications

Laser Diodes CQF25B/D12 attributes and parameters. Explore more Laser Diodes devices from NXP Semiconductors

Specs

Maximum Forward Current:

.15 A

Maximum Forward Voltage:

2.5 V

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

850

Maximum Response Time:

.0000000005 s

Semiconductor Material:

AlGaAs

Spectral Bandwidth:

4.5 m

Sub-Category:

Laser Diodes

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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