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DL-7240-201P

Onsemi

DL-7240-201P by Onsemi

DL-7240-201P by Onsemi is a LASER DIODE with max forward current of 0.135A and peak wavelength of 783nm. It operates b/w -10 °C to 60°C, suitable for THROUGH HOLE MOUNT applications in various industries.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 1,009 parts In-Stock

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Vyrian

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SupplyDigital Components

Austria . 7,932 parts In-Stock

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TANS Electronics

Latvia . 6,164 parts In-Stock

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Problanco Electronics

Mexico . 4,113 parts In-Stock

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Northwest PG Solutions

USA . 1,930 parts In-Stock

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Native Components

USA . 956 parts In-Stock

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UHIMA Technologies

Türkiye . 518 parts In-Stock

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Kulean Microsystems

USA . 492 parts In-Stock

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Corohmni

South Africa . 358 parts In-Stock

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Corphita

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Overview

Enhance your projects with the DL-7240-201P Laser Diode by Onsemi, a reliable choice for quality optoelectronic components. Onsemi's reputation for excellence shines through in this product, offering peak performance and durability. Ideal for applications requiring precision and accuracy, this laser diode delivers consistent results at a maximum forward current of 0.135 A. With a peak wavelength of 783 nm, it operates seamlessly in temperatures ranging from -10 to 60 °C. Trust Onsemi for cutting-edge technology that elevates your work to new heights.

Feature Benefit Bullets

Maximum Forward Current: 0.135 A

This high maximum forward current allows for reliable and consistent performance of the laser diode.

Peak Wavelength (nm): 783

The peak wavelength of 783 nm makes this laser diode suitable for various applications including telecommunications and industrial use.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product offers high efficiency and precision in light emission, making it a top choice for laser applications.

Maximum Operating Temperature: 60 °C

With a maximum operating temperature of 60 °C, this laser diode can withstand high heat conditions and perform reliably without overheating.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature of -10 °C ensures that this laser diode can also function effectively in cold environments.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature allows for easy and secure installation of the laser diode, making it suitable for various electronic and optical systems.

Technical Specifications

Laser Diodes DL-7240-201P attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.135 A

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

783

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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