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CQF25C/D14

NXP Semiconductors

CQF25C/D14 by NXP Semiconductors

CQF25C/D14 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 875 nm and a max forward current of 0.15 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 2,995 parts In-Stock

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Anansix

USA . 1,462 parts In-Stock

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Digiode

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One Stop Electronics

USA . 168 parts In-Stock

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Corphita

USA . 2,820 parts In-Stock

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UNI Independent Distributors

Spain . 627 parts In-Stock

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Northwest PG Solutions

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Native Components

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Overview

Elevate your projects with the CQF25C/D14 laser diode from NXP Semiconductors, a leader in innovation and quality. Designed for precision and reliability, this versatile component excels in applications ranging from industrial automation to medical devices. Experience unmatched performance and stability, ensuring your systems run smoothly. With NXP's commitment to excellence, you gain peace of mind and enhanced outcomes, making every project a success.

Feature Benefit Bullets

Maximum Forward Current: 0.15 A

This low forward current allows for efficient power consumption, making the diode suitable for battery-operated devices.

Peak Wavelength: 875 nm

The 875 nm wavelength is ideal for applications requiring infrared light, such as security systems and remote sensing.

Optoelectronic Type: LASER DIODE

As a laser diode, it provides coherent light output, making it effective for precise applications like data communication and laser displays.

Maximum Operating Temperature: 60 °C

The high maximum operating temperature ensures reliability and performance in warmer environments, expanding application possibilities.

Minimum Operating Temperature: -10 °C

With a minimum operating temperature of -10 °C, this diode is versatile for use in various climates and outdoor applications.

Maximum Response Time: 0.5 ns

The fast response time allows for high-speed modulation, contributing to applications in telecommunications and data transmission.

Semiconductor Material: AlGaAs

AlGaAs material offers high efficiency, contributing to lower energy consumption and longer operational life.

Spectral Bandwidth: 4.5 nm

The narrow spectral bandwidth ensures high spectral purity, making it suitable for applications requiring precision wavelength control.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature facilitates easy installation in various PCB designs, improving manufacturability.

Maximum Forward Voltage: 2.5 V

Low forward voltage allows for compatibility with a wide range of power supplies, maximizing design flexibility.

Technical Specifications

Laser Diodes CQF25C/D14 attributes and parameters. Explore more Laser Diodes devices from NXP Semiconductors

Specs

Maximum Forward Current:

.15 A

Maximum Forward Voltage:

2.5 V

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

875

Maximum Response Time:

.0000000005 s

Semiconductor Material:

AlGaAs

Spectral Bandwidth:

4.5 m

Sub-Category:

Laser Diodes

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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