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CQF23/D13

NXP Semiconductors

CQF23/D13 by NXP Semiconductors

CQF23/D13 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 790 nm and a max forward current of 0.07 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,740 parts In-Stock

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Digiode

USA . 2,475 parts In-Stock

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2,475

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Anansix

USA . 1,544 parts In-Stock

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1,544

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Distributors (Availability)

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One Stop Electronics

USA . 849 parts In-Stock

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$9.100

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849

$9.100

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Native Components

USA . 519 parts In-Stock

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$13.814

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519

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Northwest PG Solutions

USA . 327 parts In-Stock

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$15.196

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$13.676

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327

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$13.676

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Corphita

USA . 4,588 parts In-Stock

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UNI Independent Distributors

Spain . 2,125 parts In-Stock

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Overview

Elevate your projects with the CQF23/D13 laser diode from NXP Semiconductors, a trusted leader in innovative solutions. This high-performance component delivers exceptional reliability and efficiency, perfect for applications ranging from precision sensing to advanced communication systems. With its robust temperature resilience and swift response time, the CQF23/D13 ensures optimal performance, empowering you to achieve remarkable results while reducing operational costs. Experience the NXP advantage today!

Feature Benefit Bullets

Maximum Forward Current: 0.07 A

Low maximum forward current allows for reduced power consumption and efficient operation, making this laser diode suitable for battery-powered applications.

Peak Wavelength: 790 nm

The 790 nm wavelength makes this diode ideal for applications such as optical communication and laser ranging, where specific wavelength requirements are essential.

Optoelectronic Type: LASER DIODE

As a laser diode, this product offers high coherence, directionality, and brightness, providing reliable performance for various optoelectronic applications.

Maximum Operating Temperature: 60 °C

The high maximum operating temperature ensures that the laser diode can function effectively in demanding environments without overheating.

Minimum Operating Temperature: -10 °C

The ability to operate at temperatures as low as -10 °C makes this diode suitable for outdoor and cold environment applications, ensuring versatility.

Maximum Response Time: 0.0000000005 s

With an extremely fast response time, this laser diode is well-suited for high-speed data communication and precise measurement applications.

Semiconductor Material: AlGaAs

Using AlGaAs semiconductor material enhances the efficiency and performance characteristics of the laser diode, ensuring reliable long-term operation.

Spectral Bandwidth: 2 nm

A narrow spectral bandwidth of 2 nm allows for reduced noise and improved signal integrity, making this laser diode ideal for fine-tuned optical applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mount feature provides easy installation and mechanical stability, making it convenient for integration into various circuits.

Maximum Forward Voltage: 2.5 V

A low maximum forward voltage of 2.5 V enables compatibility with low-voltage power supplies, enhancing its straightforward integration into electronic systems.

Technical Specifications

Laser Diodes CQF23/D13 attributes and parameters. Explore more Laser Diodes devices from NXP Semiconductors

Specs

Maximum Forward Current:

.07 A

Maximum Forward Voltage:

2.5 V

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

790

Maximum Response Time:

.0000000005 s

Semiconductor Material:

AlGaAs

Spectral Bandwidth:

2 m

Sub-Category:

Laser Diodes

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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