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DL-3150-105

Onsemi

DL-3150-105 by Onsemi

DL-3150-105 by Onsemi is a GaAs LASER DIODE with peak wavelength of 790nm. It operates b/w -10 to 70 °C, with max forward current of 0.06A and voltage of 2.3V. Ideal for optoelectronic applications requiring THROUGH HOLE MOUNTing.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 2,137 parts In-Stock

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Vyrian

USA . 1,869 parts In-Stock

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TANS Electronics

Latvia . 6,922 parts In-Stock

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SupplyDigital Components

Austria . 5,711 parts In-Stock

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Kulean Microsystems

USA . 5,610 parts In-Stock

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UHIMA Technologies

Türkiye . 412 parts In-Stock

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Corphita

USA . 353 parts In-Stock

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Problanco Electronics

Mexico . 339 parts In-Stock

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Native Components

USA . 193 parts In-Stock

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Northwest PG Solutions

USA . 84 parts In-Stock

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Corohmni

South Africa . 69 parts In-Stock

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Overview

Elevate your projects with the DL-3150-105 Laser Diode by Onsemi, a high-quality product designed to exceed expectations. With a peak wavelength of 790nm and a maximum forward current of 0.06A, this laser diode is perfect for a wide range of applications. Whether you're working on industrial automation, medical equipment, or security systems, this versatile component offers reliable performance and precise results. Trust in Onsemi's reputation for excellence and unlock the potential of your creations with the DL-3150-105.

Feature Benefit Bullets

Maximum Forward Current: 0.06 A

Low maximum forward current ensures energy efficiency and helps extend the lifespan of the laser diode.

Peak Wavelength (nm): 790

790nm peak wavelength is ideal for various applications such as telecommunications, medical equipment, and industrial machinery.

Optoelectronic Type: LASER DIODE

Being a laser diode makes this product suitable for precision laser applications due to its focused beam and coherence.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this laser diode can withstand harsh environments and extended usage.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature allows this laser diode to function in cold environments without any issues.

Semiconductor Material: GaAs

Gallium Arsenide is a reliable and efficient semiconductor material, making this laser diode durable and high-performing.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting provides a secure and stable installation for the laser diode, ensuring proper alignment and longevity.

Maximum Forward Voltage: 2.3 V

Low maximum forward voltage consumption helps in reducing power usage and heat generation, increasing the overall efficiency of the laser diode.

Technical Specifications

Laser Diodes DL-3150-105 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.06 A

Maximum Forward Voltage:

2.3 V

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

790

Semiconductor Material:

GaAs

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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