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DL-3144-008S

Onsemi

DL-3144-008S by Onsemi

DL-3144-008S by Onsemi is a GaAs LASER DIODE with Peak Wavelength of 785nm. It has Max Forward Current of 0.055A and operates b/w -10 to 60 °C. Ideal for applications requiring THROUGH HOLE MOUNT optoelectronics in various industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 1,811 parts In-Stock

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Digiode

USA . 396 parts In-Stock

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Pegasus Components GmbH

Germany . 153 parts In-Stock

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Native Components

USA . 476 parts In-Stock

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$0.130

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Northwest PG Solutions

USA . 1,921 parts In-Stock

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$0.143

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Problanco Electronics

Mexico . 8,303 parts In-Stock

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SupplyDigital Components

Austria . 4,815 parts In-Stock

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Corphita

USA . 1,320 parts In-Stock

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Kulean Microsystems

USA . 576 parts In-Stock

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Corohmni

South Africa . 327 parts In-Stock

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UHIMA Technologies

Türkiye . 307 parts In-Stock

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TANS Electronics

Latvia . 119 parts In-Stock

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Overview

Discover the DL-3144-008S by Onsemi, a top-tier laser diode that delivers unmatched quality and reliability. Manufactured by Onsemi, a trusted name in the industry, this laser diode is perfect for a wide range of applications. With a peak wavelength of 785nm and a maximum forward current of 0.055A, this product offers exceptional performance and precision. Whether you're working on medical equipment, industrial machinery, or telecommunications devices, the DL-3144-008S provides unbeatable value, benefits, and advantages to meet your needs. Experience the difference with Onsemi's superior technology.

Feature Benefit Bullets

Maximum Forward Current: 0.055 A

The low maximum forward current allows for efficient use of power and helps prolong the lifespan of the laser diode.

Peak Wavelength (nm): 785

The peak wavelength of 785 nm makes this laser diode suitable for a variety of applications including telecommunications, medical devices, and industrial processes.

Optoelectronic Type: LASER DIODE

Being a laser diode, it provides a coherent and focused beam of light which is ideal for applications such as laser therapy, laser printing, and optical communication.

Maximum Operating Temperature: 60 °C

With a maximum operating temperature of 60 °C, this laser diode can withstand high temperatures without affecting its performance, making it reliable for industrial and outdoor applications.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature of -10 °C ensures that the laser diode can function effectively even in cold environments, making it versatile for various operating conditions.

Semiconductor Material: GaAs

The use of GaAs (Gallium Arsenide) semiconductor material provides high efficiency and reliability, making the laser diode a durable and long-lasting choice for applications requiring a stable output.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature allows for easy installation and secure positioning of the laser diode, ensuring stable operation even in harsh environmental conditions.

Technical Specifications

Laser Diodes DL-3144-008S attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.055 A

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

785

Semiconductor Material:

GaAs

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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