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SDL6033-001

Onsemi

SDL6033-001 by Onsemi

SDL6033-001 by Onsemi is an 875nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise optical emission in a wide temperature range.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,235 parts In-Stock

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Digiode

USA . 410 parts In-Stock

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Problanco Electronics

Mexico . 5,758 parts In-Stock

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TANS Electronics

Latvia . 5,350 parts In-Stock

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Kulean Microsystems

USA . 3,183 parts In-Stock

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SupplyDigital Components

Austria . 2,993 parts In-Stock

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Corphita

USA . 1,034 parts In-Stock

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Corohmni

South Africa . 338 parts In-Stock

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UHIMA Technologies

Türkiye . 277 parts In-Stock

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Overview

Experience the superior quality and precision of the SDL6033-001 Laser Diode by Onsemi. With a peak wavelength of 875nm and a wide operating temperature range, this laser diode is perfect for a variety of optoelectronic applications. Trust in Onsemi's reputation for excellence in semiconductor manufacturing to deliver a reliable and efficient product. Enhance your projects with the SDL6033-001 and unlock new possibilities in your work.

Feature Benefit Bullets

Peak Wavelength (nm): 875

The peak wavelength of 875nm makes this laser diode suitable for applications requiring a specific wavelength of light to achieve optimal performance.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product offers high efficiency and precise control over the output light, making it ideal for various laser applications.

Maximum Operating Temperature: 50 °C

With a maximum operating temperature of 50 °C, this laser diode can withstand high temperatures, ensuring reliable performance in challenging environments.

Minimum Operating Temperature: -10 °C

The ability to operate at low temperatures down to -10 °C makes this laser diode versatile and suitable for a wide range of applications.

Semiconductor Material: GaAlAs

The use of GaAlAs semiconductor material in this laser diode ensures high power output and stability, making it a reliable choice for demanding laser applications.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature simplifies the installation process and provides secure mounting, ensuring stable operation of the laser diode.

Technical Specifications

Laser Diodes SDL6033-001 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

875

Semiconductor Material:

GaAlAs

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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