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CQF25C/D52

NXP Semiconductors

CQF25C/D52 by NXP Semiconductors

CQF25C/D52 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 875 nm and a max forward current of 0.15 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With a rapid response time of 0.5 ns, it's perfect for precision tasks.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,240 parts In-Stock

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Anansix

USA . 1,807 parts In-Stock

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Vyrian

USA . 1,200 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 404 parts In-Stock

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$0.309

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$0.296

404

$0.309

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Northwest PG Solutions

USA . 1,925 parts In-Stock

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$0.340

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$0.299

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$0.340

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One Stop Electronics

USA . 994 parts In-Stock

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$10.100

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994

$10.100

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UNI Independent Distributors

Spain . 7,710 parts In-Stock

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Corphita

USA . 3,325 parts In-Stock

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Overview

Elevate your projects with the CQF25C/D52 laser diode from NXP Semiconductors, a name synonymous with quality and innovation. Designed for reliability in diverse applications, this laser diode ensures precise performance across various environments. Enjoy exceptional efficiency and rapid response times that enhance your designs, all backed by NXP’s commitment to excellence. Choose CQF25C/D52 for superior technology that drives success!

Feature Benefit Bullets

Maximum Forward Current: 0.15 A

With a maximum forward current of 0.15 A, this laser diode is efficient for low-power applications, ensuring prolonged battery life and reduced heat generation.

Peak Wavelength: 875 nm

The peak wavelength of 875 nm makes this laser diode ideal for applications in infrared communication and sensing technologies where such wavelengths are required.

Optoelectronic Type: LASER DIODE

As an optoelectronic device, this laser diode ensures precise light generation, making it suitable for a variety of applications, including optical data transmission and laser-based measurements.

Maximum Operating Temperature: 60 °C

With a maximum operating temperature of 60 °C, this laser diode can function effectively in warm environments, enhancing its reliability in high-temperature applications.

Minimum Operating Temperature: -10 °C

The ability to operate at a minimum temperature of -10 °C makes this laser diode versatile, enabling reliable performance in colder environments.

Maximum Response Time: 0.5 ns

A maximum response time of just 0.5 ns allows for rapid signal processing, making this laser diode suitable for high-speed communication applications.

Semiconductor Material: AlGaAs

Utilizing AlGaAs as the semiconductor material ensures excellent efficiency and performance, resulting in higher output and longer device lifetime.

Spectral Bandwidth: 4.5 nm

A narrow spectral bandwidth of 4.5 nm is beneficial for applications requiring precise wavelength control, improving signal integrity in communication systems.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mount design provides easy integration into various circuit boards, simplifying assembly and enhancing the reliability of connections.

Maximum Forward Voltage: 2.5 V

A maximum forward voltage of 2.5 V indicates low power consumption, making this laser diode suitable for battery-operated devices and energy-efficient designs.

Technical Specifications

Laser Diodes CQF25C/D52 attributes and parameters. Explore more Laser Diodes devices from NXP Semiconductors

Specs

Maximum Forward Current:

.15 A

Maximum Forward Voltage:

2.5 V

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

875

Maximum Response Time:

.0000000005 s

Semiconductor Material:

AlGaAs

Spectral Bandwidth:

4.5 m

Sub-Category:

Laser Diodes

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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