Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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CQF25B/D24 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 850 nm and a max forward current of 0.15 A. It operates efficiently b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for data communication systems.
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UNI Independent Distributors
The high maximum forward current allows for efficient operation and ensures consistent performance, making it suitable for high-power applications.
The peak wavelength of 850 nm is ideal for applications in optical communication and sensing, providing effective light transmission and detection.
As a laser diode, it offers high coherence and directional light output, making it a great choice for precision applications requiring focused beams.
The ability to operate at high temperatures (up to 60 °C) enhances its reliability in demanding environments and minimizes the risk of performance degradation.
The low minimum operating temperature of -10 °C allows this laser diode to function effectively in a wider range of environments, adding to its versatility.
With a maximum response time of 0.5 ns, this laser diode is suitable for high-speed applications, facilitating rapid data transfer and efficient signal processing.
Utilizing AlGaAs semiconductor material provides excellent efficiency and performance, contributing to the overall effectiveness and reliability of the laser diode.
The spectral bandwidth of 4.5 nm supports a range of applications in telecommunications and sensing by allowing operation across various wavelengths.
The through-hole mount design facilitates easy integration into various circuit designs, enhancing its adaptability for different applications.
A maximum forward voltage of 2.5 V ensures low power consumption, making this laser diode energy-efficient while maintaining optimal performance.
Laser Diodes CQF25B/D24 attributes and parameters. Explore more Laser Diodes devices from NXP Semiconductors
Maximum Forward Current:
Maximum Forward Voltage:
Mounting Feature:
Maximum Operating Temperature:
Minimum Operating Temperature:
Optoelectronic Type:
Peak Wavelength (nm):
Maximum Response Time:
Semiconductor Material:
Spectral Bandwidth:
Sub-Category:
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
BAV99
Plessey Semiconductors Discrete Components Div
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SS14
Silicon Standard
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
Jiangsu Jiejie Microelectronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SMMBT3904LT1G
Onsemi
SMMBT3904LT1G by Onsemi is a NPN BJT with 3 terminals, 0.3W power dissipation, and 40V max collector-emitter voltage. Ideal for small outline applications requiring a transistor with hFE of at least 30, it operates up to 150°C and has a transition frequency of 300MHz.
LM317T
Micro Commercial Components
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Moisture Sensitivity Level (MSL): 1; Maximum Output Current-1: 1.5 A; Operating Temperature (TJ-Min): 0 Cel;
1N4148
Diotec Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
MBR0530T1G
MBR0530T1G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.375V and output current of 0.5A. It operates b/w -65°C to 125°C, making it suitable for applications requiring high-speed switching in compact electronic devices like smartphones and tablets. The package style is small outline with gull wing terminals for surface mount assembly.
LL4148
Transys Electronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Forward International Electronics
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Maximum Operating Temperature: 200 Cel; No. of Phases: 1;
BAT54SLT1G
BAT54SLT1G by Onsemi is a fast recovery Schottky diode with 2 elements in series connected configuration. It has a max reverse recovery time of 0.005 us and a max forward voltage of 0.8 V. Ideal for applications requiring high-speed rectification, it operates b/w -55 to 150 °C and can handle a max output current of 0.2 A.
Vishay Intertechnology
2N2222A
General Transistor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Daco Semiconductor
OPA2277UA
Burr-Brown Corporation
OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
1N4148WT
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MMSZ5245BT1G
MMSZ5245BT1G by Onsemi is a Zener diode with 15V nominal reference voltage, 8.5mA test current, and 16 ohm dynamic impedance. It is used in applications requiring precise voltage regulation in a compact SMD package for temperatures ranging from -55 to 150°C.
Vishay Telefunken
BSS138W-7-F
Multicomp Pro
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Element Material: SILICON; No. of Elements: 1;
ULN2803A
YOUTAI SEMICONDUCTOR CO LTD
BUFFER OR INVERTER BASED PERIPHERAL DRIVER; Terminal Form: GULL WING; No. of Terminals: 18; Package Code: SOP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G18;
BSS123NH6327XTSA1
Infineon Technologies
Infineon BSS123NH6327XTSA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.19A ID, and 6 ohm RDS(on). Ideal for small outline applications requiring high drain current and low on-resistance. AEC-Q101 compliant for automotive use.
SDL5033-101
SDL5033-101 by Onsemi is an 875nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications in optoelectronics.
NX8562LF654-BA-AZ
Renesas Electronics
LASER DIODE; Semiconductor Material: GaAs; Minimum Operating Temperature: -20 Cel; Maximum Forward Current: .3 A; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 1.5 V;
SDL4030-101
SDL4030-101 by Onsemi is an 805nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications in optoelectronics.
DL-4038-226
DL-4038-226 by Onsemi is a Laser Diode with 0.085A max forward current, peak wavelength of 635nm, and 2.6V max forward voltage. Ideal for applications requiring laser diodes in temperatures ranging from -10 °C to 40°C with through hole mounting feature.
54-00152
Viavi Solutions
Viavi Solutions' 54-00152 Laser Diode operates at peak wavelength of 810nm with spectral bandwidth of 3m. It can withstand temperatures from -20°C to 50°C, featuring through hole mounting. Ideal for applications requiring precise laser emission in optoelectronics and telecommunications.
NX8567SAM342-CC
LASER DIODE; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1534; Maximum Response Time: .000000000125 s;
DL-3147-285
DL-3147-285 by Onsemi is a LASER DIODE with Peak Wavelength of 650nm, Max Forward Current of 0.05A, and Max Forward Voltage of 2.6V. It operates b/w -10 °C to 80°C and is mounted using THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in various industries.
NX8563LB638-BA
LASER DIODE; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A; Maximum Forward Voltage: 1.5 V; Minimum Operating Temperature: -20 Cel; Peak Wavelength (nm): 1564;
NX8570SA630-BA
LASER DIODE; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1563;
DL-3149-054
DL-3149-054 by Onsemi is a 680nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 60°C, suitable for THROUGH HOLE MOUNT applications in optoelectronics.
TOLD320CCC
Toshiba
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -30 Cel; Semiconductor Material: InGaAs; Maximum Response Time: .000000001 s; Peak Wavelength (nm): 1310;
NX8563LF6091-BA-AZ
LASER DIODE; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .3 A; Minimum Operating Temperature: -20 Cel; Peak Wavelength (nm): 1609; Maximum Forward Voltage: 2.5 V;
NX8570SC766-BA
LASER DIODE; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1577; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2.5 V;
TOLD323BBA
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAs; Maximum Forward Voltage: 2 V; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -10 Cel;
CQF25C/D41
NXP Semiconductors
CQF25C/D41 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 875 nm and a max forward current of 0.15 A. It operates efficiently b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks in communication systems.
NX8563LF597-BA-AZ
LASER DIODE; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2.5 V;
SDL4030-001
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 790; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 65 Cel;
TOLD138
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Forward Current: .105 A; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 830;
NX8560LJ303-BC
LASER DIODE; Maximum Operating Temperature: 70 Cel; Semiconductor Material: GaAs; Maximum Response Time: .00000000004 s; Peak Wavelength (nm): 1530; Maximum Forward Voltage: 2 V;
SDL4032
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Semiconductor Material: GaAlAs; JESD-609 Code: e0; Peak Wavelength (nm): 830;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
CQF25B/D14
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000000005 s; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 60 Cel; Spectral Bandwidth: 4.5 m;
CQF25A/D12
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: AlGaAs; Spectral Bandwidth: 4.5 m; Maximum Operating Temperature: 60 Cel; Maximum Response Time: .0000000005 s;
CQF23/D24
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: AlGaAs; Spectral Bandwidth: 2 m; Maximum Response Time: .0000000005 s; Maximum Forward Voltage: 2.5 V;
CQF25B/D12
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2.5 V; Spectral Bandwidth: 4.5 m; Minimum Operating Temperature: -10 Cel;
CQF25A/D14
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 60 Cel; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .15 A; Peak Wavelength (nm): 820;
CQF23/D52
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: AlGaAs; Maximum Forward Current: .07 A; Peak Wavelength (nm): 790; Maximum Forward Voltage: 2.5 V;
CQF23/D12
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Spectral Bandwidth: 2 m; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 60 Cel; Maximum Forward Current: .07 A;
CQF25A/D13
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Spectral Bandwidth: 4.5 m; Maximum Forward Current: .15 A; Maximum Response Time: .0000000005 s; Peak Wavelength (nm): 820;
CQF23/D41
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Spectral Bandwidth: 2 m; Maximum Operating Temperature: 60 Cel; Maximum Forward Current: .07 A;
CQF25B/D11
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 850; Minimum Operating Temperature: -10 Cel;
CQF25A/D41
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Response Time: .0000000005 s; Semiconductor Material: AlGaAs; Maximum Forward Current: .15 A;
CQF23/D44
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: AlGaAs; Peak Wavelength (nm): 790; Maximum Forward Voltage: 2.5 V; Maximum Response Time: .0000000005 s;
CQF25B/D13
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000000005 s; Maximum Forward Voltage: 2.5 V; Spectral Bandwidth: 4.5 m; Minimum Operating Temperature: -10 Cel;
CQF23/D14
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 60 Cel; Spectral Bandwidth: 2 m; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .07 A;
CQF25A/D11
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Response Time: .0000000005 s; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 60 Cel;
CQF23/D11
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: AlGaAs; Peak Wavelength (nm): 790; Minimum Operating Temperature: -10 Cel; Maximum Forward Voltage: 2.5 V;
CQF23/D13
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000000005 s; Spectral Bandwidth: 2 m; Peak Wavelength (nm): 790; Minimum Operating Temperature: -10 Cel;
CQF23/D43
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: AlGaAs; Maximum Operating Temperature: 60 Cel; Spectral Bandwidth: 2 m; Maximum Response Time: .0000000005 s;
CQF25A/D52
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Spectral Bandwidth: 4.5 m; Semiconductor Material: AlGaAs; Minimum Operating Temperature: -10 Cel; Maximum Forward Current: .15 A;
CQF25B/D23
Philips Semiconductors
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Forward Current: .15 A; JESD-609 Code: e0; Maximum Forward Voltage: 2.5 V;
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