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DL-3148-025

Onsemi

DL-3148-025 by Onsemi

DL-3148-025 by Onsemi is a LASER DIODE with peak wavelength of 635nm. It has max forward current of 0.045A and voltage of 2.4V, suitable for THROUGH HOLE MOUNT applications. Operating temp range from -10 °C to 40°C makes it ideal for various optoelectronic projects.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,796 parts In-Stock

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Vyrian

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Kulean Microsystems

USA . 4,051 parts In-Stock

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SupplyDigital Components

Austria . 3,961 parts In-Stock

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Problanco Electronics

Mexico . 3,419 parts In-Stock

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Corphita

USA . 2,221 parts In-Stock

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Northwest PG Solutions

USA . 1,733 parts In-Stock

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TANS Electronics

Latvia . 1,417 parts In-Stock

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UHIMA Technologies

Türkiye . 474 parts In-Stock

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Native Components

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Corohmni

South Africa . 165 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the DL-3148-025 Laser Diode from Onsemi. Known for their superior quality and reliability, Onsemi products are trusted by professionals worldwide. Ideal for a wide range of applications, this laser diode offers unmatched precision and performance. Whether you're working on medical equipment, industrial machinery, or consumer electronics, the DL-3148-025 delivers exceptional value and efficiency. Upgrade your projects today with this innovative solution from Onsemi.

Feature Benefit Bullets

Maximum Forward Current: 0.045 A

Low forward current consumption allows for efficient power usage and longer lifespan of the laser diode.

Peak Wavelength (nm): 635

Optimal wavelength for various applications including laser therapy, alignment, and targeting.

Optoelectronic Type: LASER DIODE

Being a laser diode type ensures high precision and focused light output for accurate and effective results.

Maximum Operating Temperature: 40 °C

Wide operating temperature range makes this laser diode suitable for a variety of environments and applications.

Minimum Operating Temperature: -10 °C

Ability to operate in low temperatures expands the usability of this laser diode in different scenarios.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting simplifies the installation process and provides secure attachment for stable performance.

Maximum Forward Voltage: 2.4 V

Low forward voltage requirement ensures compatibility with a wide range of power sources and systems.

Technical Specifications

Laser Diodes DL-3148-025 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.045 A

Maximum Forward Voltage:

2.4 V

Mounting Feature:

Maximum Operating Temperature:

40 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

635

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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