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NX8563LF581-BA-A

Renesas Electronics

NX8563LF581-BA-A by Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -20 Cel; Peak Wavelength (nm): 1558; Maximum Forward Voltage: 1.5 V; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Laser Diodes NX8563LF581-BA-A attributes and parameters. Explore more Laser Diodes devices from Renesas Electronics

Specs

Maximum Forward Current:

.3 A

Maximum Forward Voltage:

1.5 V

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-20 Cel

Optoelectronic Type:

Peak Wavelength (nm):

1558

Semiconductor Material:

InGaAsP

Sub-Category:

Laser Diodes

Manufacturer Highlights

Renesas Electronics

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