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DL-3150-127

Onsemi

DL-3150-127 by Onsemi

DL-3150-127 by Onsemi is a LASER DIODE with peak wavelength of 790nm. It has max forward current of 0.035A and max forward voltage of 2.3V. Ideal for applications requiring precise laser emission in temp range -10 to 60 °C, with through hole mounting feature.

Median Price

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Lifecycle Status

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Vyrian

USA . 2,298 parts In-Stock

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Digiode

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SupplyDigital Components

Austria . 6,144 parts In-Stock

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TANS Electronics

Latvia . 5,296 parts In-Stock

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Kulean Microsystems

USA . 3,667 parts In-Stock

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Corphita

USA . 2,326 parts In-Stock

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Northwest PG Solutions

USA . 1,261 parts In-Stock

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Native Components

USA . 887 parts In-Stock

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Problanco Electronics

Mexico . 667 parts In-Stock

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UHIMA Technologies

Türkiye . 557 parts In-Stock

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Corohmni

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Overview

Experience the cutting-edge technology of the DL-3150-127 Laser Diode by Onsemi, a leading manufacturer in the industry. This high-quality product boasts a peak wavelength of 790nm and a maximum forward current of 0.035A, making it ideal for a wide range of applications. From telecommunications to medical devices, this laser diode offers reliable performance and precision. Trust Onsemi for superior quality and innovation, and elevate your projects with the DL-3150-127 today.

Feature Benefit Bullets

Maximum Forward Current: 0.035 A

This low maximum forward current ensures efficient power usage and helps prolong the lifespan of the laser diode.

Peak Wavelength (nm): 790

The peak wavelength of 790nm is ideal for various applications including medical, communication, and industrial uses.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product offers precise and controlled laser beams for high-performance applications.

Maximum Operating Temperature: 60 °C

With a maximum operating temperature of 60 °C, this laser diode can withstand high temperatures without compromising performance.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature of -10 °C allows this laser diode to be used in a wide range of environments.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature makes installation and integration of this laser diode into projects easy and convenient.

Maximum Forward Voltage: 2.3 V

The low maximum forward voltage requirement of 2.3V helps in reducing power consumption and overall energy costs.

Technical Specifications

Laser Diodes DL-3150-127 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.035 A

Maximum Forward Voltage:

2.3 V

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

790

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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