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DL-3147-241

Onsemi

DL-3147-241 by Onsemi

DL-3147-241 by Onsemi is a 655nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 60°C, suitable for THROUGH HOLE MOUNT applications like laser pointers and medical devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,785 parts In-Stock

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1,785

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Vyrian

USA . 436 parts In-Stock

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436

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Distributors (Availability)

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Native Components

USA . 772 parts In-Stock

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$0.236

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$0.227

772

$0.236

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$0.227

Northwest PG Solutions

USA . 1,217 parts In-Stock

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$0.260

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$0.229

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$0.260

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$0.229

TANS Electronics

Latvia . 7,321 parts In-Stock

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7,321

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SupplyDigital Components

Austria . 4,132 parts In-Stock

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4,132

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Kulean Microsystems

USA . 3,332 parts In-Stock

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3,332

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Problanco Electronics

Mexico . 2,162 parts In-Stock

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UHIMA Technologies

Türkiye . 358 parts In-Stock

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358

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Corphita

USA . 287 parts In-Stock

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Corohmni

South Africa . 261 parts In-Stock

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Overview

Elevate your projects with the DL-3147-241 by Onsemi, a top-tier manufacturer known for their superior quality laser diodes. Perfect for applications requiring precision and reliability, this laser diode operates at a peak wavelength of 655nm, making it ideal for a wide range of optoelectronic projects. With a maximum operating temperature of 60 °C and a minimum of -10°C, this semiconductor marvel offers unmatched performance in any environment. Experience the value and benefits that only Onsemi can deliver with the DL-3147-241.

Feature Benefit Bullets

Peak Wavelength (nm): 655

The peak wavelength of 655nm is ideal for various applications such as medical devices, barcode scanners, and laser printers.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product offers high efficiency and precise control of the light output, making it suitable for a wide range of applications including telecommunications and industrial processes.

Maximum Operating Temperature: 60 °C

With a maximum operating temperature of 60 °C, this laser diode can withstand high temperatures without compromising its performance, ensuring reliability in challenging environments.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature of -10 °C allows this laser diode to operate effectively in cold environments, expanding its usability in various settings.

Semiconductor Material: AlGaInP

The use of AlGaInP semiconductor material in this laser diode provides high efficiency and reliability, offering consistent performance over its lifespan.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature of this laser diode allows for easy and secure installation on circuit boards, ensuring stable performance and durability in diverse applications.

Technical Specifications

Laser Diodes DL-3147-241 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

655

Semiconductor Material:

AlGaInP

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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