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CQF25B/D41

NXP Semiconductors

CQF25B/D41 by NXP Semiconductors

CQF25B/D41 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 850 nm and a max forward current of 0.15 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for data communication systems.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

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Digiode

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Anansix

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Native Components

USA . 896 parts In-Stock

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$0.909

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Northwest PG Solutions

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One Stop Electronics

USA . 372 parts In-Stock

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UNI Independent Distributors

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Corphita

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Overview

Elevate your projects with the CQF25B/D41 laser diode from NXP Semiconductors—a leader in innovative solutions. Renowned for reliability and performance, this laser diode offers exceptional precision with a peak wavelength of 850 nm, making it perfect for applications spanning communications to sensors. Its robust design ensures optimal operation even in challenging environments, delivering unmatched value and efficiency for your next breakthrough.

Feature Benefit Bullets

Maximum Forward Current: 0.15 A

The low maximum forward current ensures efficient power usage, enabling longer operational life and lower heat generation.

Peak Wavelength: 850 nm

The 850 nm wavelength is ideal for a variety of applications, including fiber optic communication, providing excellent performance in data transmission.

Optoelectronic Type: LASER DIODE

As a laser diode, this product offers high coherence and directionality, making it suitable for precision applications in communication and sensing.

Maximum Operating Temperature: 60 °C

The capability to operate at a maximum temperature of 60 °C allows for versatility across various environments, enhancing reliability in high-temperature applications.

Minimum Operating Temperature: -10 °C

With a minimum operating temperature of -10 °C, the product remains functional in colder conditions, broadening its usability across different climates.

Maximum Response Time: 0.5 ns

The ultra-fast response time of 0.5 ns ensures rapid signal processing, making it an exceptional choice for high-speed communication systems.

Semiconductor Material: AlGaAs

Utilizing AlGaAs semiconductor material provides improved performance characteristics and efficiency, contributing to superior optical and electronic properties.

Spectral Bandwidth: 4.5 nm

The 4.5 nm spectral bandwidth allows for better wavelength stability, making it suitable for applications that require specific wavelength tuning and minimal dispersion.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature facilitates easy integration into various circuit designs, providing a robust and secure operational setup.

Maximum Forward Voltage: 2.5 V

Operating at a maximum forward voltage of 2.5 V helps in minimizing power consumption, thereby extending the lifespan of the device and reducing overall operating costs.

Technical Specifications

Laser Diodes CQF25B/D41 attributes and parameters. Explore more Laser Diodes devices from NXP Semiconductors

Specs

Maximum Forward Current:

.15 A

Maximum Forward Voltage:

2.5 V

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

850

Maximum Response Time:

.0000000005 s

Semiconductor Material:

AlGaAs

Spectral Bandwidth:

4.5 m

Sub-Category:

Laser Diodes

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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