Loading...

HL6326G

Renesas Electronics

HL6326G by Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 60 Cel; Semiconductor Material: AlGaInP; Nominal Output Power: 5 W; Peak Wavelength (nm): 635;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Northwest PG Solutions

USA . 1,221 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,221

-

-

-

-

Native Components

USA . 901 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

901

-

-

-

-

Technical Specifications

Laser Diodes HL6326G attributes and parameters. Explore more Laser Diodes devices from Renesas Electronics

Specs

Configuration:

SINGLE WITH BUILT-IN PHOTO DIODE

Maximum Forward Current:

.06 A

Maximum Forward Voltage:

2.4 V

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Nominal Output Power:

5 W

Peak Wavelength (nm):

635

Semiconductor Material:

AlGaInP

Shape:

ROUND

Size:

2 mm

Sub-Category:

Laser Diodes

Maximum Threshold Current:

50 mA

Manufacturer Highlights

Renesas Electronics

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20